公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | Rapid post-metallization annealing effects on high-k Y<inf>2</inf>O<inf>3</inf>/Si capacitor | Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 9 | | |
2017 | Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance | Pi, T.W.; Chen, W.S.; Lin, Y.H.; Cheng, Y.T.; Wei, G.J.; Lin, K.Y.; Cheng, C.-P.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 3 | 3 | |
2009 | Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics | Chiu, H.C.; Lin, T.D.; Chang, P.; Lee, W.C.; Chiang, C.H.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications | 8 | 0 | |
2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 18 | 17 | |
2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectrics | Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Device Research Conference | 14 | 0 | |
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
2010 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As metal-oxide-semiconductor field-effect-transistors using UHV-Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 36 | 37 | |
2009 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 1 | 0 | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 15 | 15 | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2014 | Single crystal Gd<inf>2</inf>O<inf>3</inf> epitaxially on GaAs(111)A | Chiang, T.-H.; Wu, S.-Y.; Huang, T.-S.; Hsu, C.-H.; Kwo, J.; Hong, M.; MINGHWEI HONG | CrystEngComm | 8 | 9 | |
2015 | Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization | Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 20 | 20 | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 35 | 40 | |
2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Microelectronic Engineering | 2 | 2 | |
2015 | Single-Crystal Y <inf>2</inf> O <inf>3</inf> Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition | Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Materials | 17 | 17 | |
2012 | Spin Pumping Induced Inverse Spin-Hall Effects in La0.7Sr0.3MnO3/Platinum Bilayer Film | Luo, G. Y.; Song, M. Y.; Hung, H. Y.; Chiu, Y. C.; Kwo, J.; Lee, S. F.; Chang, C. R.; CHING-RAY CHANG ; Lin, J. G. | IEEE Transactions on Magnetics | 7 | 7 | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Applied Physics Letters | 112 | 90 | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 13 | |