公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y<inf>2</inf> O<inf>3</inf> epitaxial films on Si (111) | Lee, Y.J.; Lee, W.C.; Huang, M.L.; Wu, S.Y.; Nieh, C.W.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 0 | 2 | |
2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 46 | 45 | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
2006 | Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics | Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 21 | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 18 | |
2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2 | 0 | |
2008 | Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection | Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG | Applied Physics Letters | 15 | 17 | |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Advanced Materials | 60 | 57 | |
2007 | Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O<inf>2</inf> films | Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG | Applied Physics Letters | 22 | 23 | |
2008 | Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures | Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 12 | 13 | |
2010 | Passivation of InGaAs using in situ molecular beam epitaxy Al2 O3 / HfO2 and HfAlO/ HfO2 | Chang, P.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 8 | |
2008 | Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) dielectric | Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Solid-State Electronics | 18 | 17 | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2007 | Structural and compositional investigation of yttrium-doped HfO<inf>2</inf> films epitaxially grown on Si (111) | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 19 | 18 | |
2007 | Structural and electrical characteristics of atomic layer deposited high 庥 HfO<inf>2</inf>on GaN | Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG | Applied Physics Letters | 112 | 90 | |
2006 | Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing | Chen, C.P.; Lee, Y.J.; Chang, Y.C.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.; Lay, T.S.; MINGHWEI HONG | Journal of Applied Physics | 34 | 32 | |
2007 | Structural and magnetic properties of epitaxial Fe<inf>3</inf>Si/GaAs heterostructures | Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 13 | 13 | |
2010 | Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001) | Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Crystal Growth and Design | 14 | 12 | |
2006 | Structure of HfO<inf>2</inf>films epitaxially grown on GaAs (001) | Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG | Applied Physics Letters | 25 | 26 | |