公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2017 | Partially polycrystalline GaN1-xAsx alloys grown on GaAs in the middle composition range achieving a smaller band gap | Wu, H.-M.; Lin, K.-I.; Liu, Y.-X.; Cheng, Y.-C.; HAO-HSIUNG LIN | Japanese Journal of Applied Physics | 1 | 1 | |
2016 | Structure of GaAsN alloy within miscibility gap | Wu, H.-M.; Lin, K.-I.; Lin, H.-H.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | 0 | 0 |