公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2014 | Impact of AlO<inf>x</inf> interfacial layer and switching mechanism in W/AlO<inf>x</inf>/TaO<inf>x</inf>/TiN RRAMs | Chakrabarti, S.; Jana, D.; Dutta, M.; Maikap, S.; Chen, Y.-Y.; Yang, J.-R.; JER-REN YANG | 2014 IEEE 6th International Memory Workshop, IMW 2014 | | | |
2015 | Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu:AlO<inf>x</inf>/TaO<inf>x</inf>/TiN structure | Roy, S.; Maikap, S.; Sreekanth, G.; Dutta, M.; Jana, D.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Journal of Alloys and Compounds | | | |
2014 | Low current cross-point memory using gadolinium-oxide switching material | Jana, D.; Maikap, S.; Chen, Y.Y.; Yang, J.R.; JER-REN YANG | Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | | | |
2008 | Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applications | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lee, H.-Y.; Lin, C.-H.; Wang, C.-C.; Lee, L.-S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Japanese Journal of Applied Physics | | | |
2005 | MBE-grown high 庥 gate dielectrics of HfO <inf>2</inf> and (Hf-Al)O <inf>2</inf> for Si and III-V semiconductors nano-electronics | Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2004 | Mechanically strained Si-SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 15 | 12 | |
2004 | Mechanically strained Si/SiGe HBTs | Yuan, F.; Jan, S.-R.; Maikap, S.; Liu, Y.-H.; Liang, C.-S.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically strained strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W. | IEEE Electron Device Letters | | | |
2004 | Mechanically Strained Strained-Si NMOSFETs | Maikap, S.; Yu, C.-Y.; Jan, S.-R.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 24 | 21 | |
2008 | Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors | Maikap, S.; Tzeng, P.-J.; Wang, T.-Y.; Lin, C.H.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Electrochemical and Solid-State Letters | | | |
2005 | Mobility-enhancement technologies | Liu, C.W.; Maikap, S.; Yu, C.-Y.; Liu, Chee Wee | IEEE Circuits and Devices Magazine | 102 | 0 | |
2017 | Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO x/TiN structure and quantum conductance through evidence of H 2 O 2 sensing mechanism | Chakrabarti, S.; Ginnaram, S.; Jana, S.; Wu, Z.-Y.; Singh, K.; Roy, A.; Kumar, P.; Maikap, S.; Qiu, J.-T.; Cheng, H.-M.; Tsai, L.-N.; Chang, Y.-L.; Mahapatra, R.; Yang, J.-R.; JER-REN YANG | Scientific Reports | | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | 2005 International Semiconductor Device Research Symposium | | | |
2005 | Novel schottky barrier strained germanium PMOS | Peng, C.-Y.; Yuan, F.; Lee, M.H.; Yu, C.-Y.; Maikap, S.; Liao, M.H. ; Chang, S.T.; Liu, C.W. | 2005 International Semiconductor Device Research Symposium | 2 | | |
2004 | Package-strain-enhanced device and circuit performance | Maikap, S.; MING-HAN LIAO ; Yuan, F.; Lee, M.H.; Huang, C.-F.; Chang, S.T.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 21 | 0 | |
2009 | Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate | Das, A.; Maikap, S.; Li, W.-C.; Chang, L.-B.; Yang, J.-R.; JER-REN YANG | Japanese Journal of Applied Physics | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; Liu, C.W.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2005 | Recent Progress in Mobility-enhancement Technologies | Liu, C. W.; Maikap, S.; Yu, C.-Y. | | | | |
2006 | The interface properties of SiO<inf>2</inf>/strained-si with carbon incorporation surface channel MOSFETs | Lee, M.H.; Chang, S.T.; Maikap, S.; Yu, C.-Y.; Liu, C.W.; CHEE-WEE LIU | Third International SiGe Technology and Device Meeting, ISTDM 2006 | | | |
2012 | Unipolar resistive switching memory characteristics using IrO<inf>x</inf>/Al<inf>2</inf>O<inf>3</inf>/SiO<inf>2</inf>/p-Si MIS structure | Banerjee, W.; Maikap, S.; Chen, Y.-Y.; Yang, J.R.; JER-REN YANG | ECS Transactions | | | |