| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 1992 | High Gain Npn AlGaAs/GaAs Heterojunction Bipolar Transistors Prepared by Molecular Beam Epitaxy | Wu, Chung Cheng; Lee, Si-Chen ; Lin, Hao-Hsiung | Japanese Journal of Applied Physics | 2 | 1 | |
| 1992 | High Perform Ance in0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular Beam Epitaxy | Wu, Chung Cheng; 呂學士 ; 李嗣涔 ; Williamson, F.; Nathan, M. I.; Wu, Chung Cheng; Lu, Shey-Shi ; Lee, Si-Chen ; Williamson, F.; Nathan, M. I. | International Conference on Solid State Devices and Materials, SSDM | |||
| 1993 | Observation of X Band Electron Quantum Interference in AlxGa1-xAs/AlAs/ AlxGa1-xAs/AlAs/AlxGa1-xAs( x>=0.4) Resonant Tunneling Diodes | Shieh, T. H.; Wu, Chung Cheng; 李嗣涔 ; Shieh, T. H.; Wu, Chung Cheng; Lee, Si-Chen | Journal of Appllied Physics | |||
| 1989 | The Origin of the Surface 2KT Recombination Current of Heterojunction Bipolar Transistor | Wu, Chung Cheng; Ting, Jing-Lung; 李嗣涔 ; Lee, Si-Chen | The 15th EDMS | |||
| 1992 | Studies of Low-Surface 2-KT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors | Wu, Chung Cheng; Ting, Jing-Lung; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | |||
| 1992 | T and X Bands Cossover Effect on the AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/ AlxGa1-xAs (0.39≦X≦0.45) Resonant Tunneling Diodes | Shieh, T. H.; Wu, Chung Cheng; 李嗣涔 ; Shieh, T. H.; Wu, Chung Cheng; Lee, Si-Chen | 1992 International EDMS |
