| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2008 | Uniform square polycrystalline silicon fabricated by employing periodic metallic pads and SiON absorption layer for thin film transistors | Yang, P.-C.; Hsueh, C.-Y.; Yang, C.-H.; Lee, J.-H.; Lin, H.-W.; Chang, H.-Y.; Chang, C.-Y.; Lee, S.-C.; SI-CHEN LEE | IEEE Transactions on Electron Devices | 0 | 0 |
