公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2008 | Uniform square polycrystalline silicon fabricated by employing periodic metallic pads and SiON absorption layer for thin film transistors | Yang, P.-C.; Hsueh, C.-Y.; Yang, C.-H.; Lee, J.-H.; Lin, H.-W.; Chang, H.-Y.; Chang, C.-Y.; SI-CHEN LEE | IEEE Transactions on Electron Devices | 0 | 0 |