公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Orentation dependent phase separation in GaAsSb | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 2011 AVS international plasma workshop on processing and characterization of advanced materials | | | |
2012 | Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | Thin solid film | 3 | 4 | |
2003 | Resonant-cavity light-emitting diodes with coupled cavity | L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN | Electron devices and materials symposium | | | |
2011 | Structural properties of (111)B GaAsSb grown on GaAs substrates | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 18th American conference on crystal growth and epitaxy, ACCGE-18 | | | |
2012 | Structural properties of GaAsSb grown on GaAs | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | 2012 Taiwan MBE Conference | | | |
2004 | Study on high-power resonant-cavity light-emitting diodes | L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN | OPT 2004 | | | |
2009 | The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells | J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
2010 | The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN | 22nd International Conference on Indium Phosphide and Related Materials (IPRM) | 0 | 0 | |
2013 | Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy | Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | Journal of Physics D: Applied Physics | 9 | 9 | |