公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG | IEEE/Cornell Conference on High Performance Devices, 2000 | 5 | | |
2002 | GaN/Gd2O3/GaN Single Crystal Heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | State-of-the-Art Program on Compound Semiconductors XXXVI, and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II | | | |
2000 | Insulator/GaN Heterostructures of Low Interfacial Density of States | Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | MRS Proceedings | | | |
2000 | Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
2000 | Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes | Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2002 | Single-crystal GaN/Gd2O3/GaN heterostructure | Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |