公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1995 | 120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide | Tan, I-H.; Sun, C.-K.; Giboney, K. S.; Bowers, J. E.; Hu, E. L.; Miller, B. I.; R. J. Capik | IEEE Photonic Technology Letters | | | |
2002 | Edge-coupled membrane terahertz photonic transmitters based on metal-semiconductor-metal traveling-wave photodetectors | Shi, J.-W.; Chu, S.-W.; Tien, M.-C.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | Applied Physics Letters | | | |
2003 | Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1eV optical excitation | Sun, C.-K.; Chen, Y.-H.; Shi, J.-W.; Chiu, Y.-J.; Gan, K.-G.; Bowers, J. E. | Applied Physics Letters | | | |
1997 | Femtosecond studies of carrier dynamics in InGaN | Sun, C.-K.; F. Vall; eacute; e, Keller, S.; Bowers, J. E.; DenBaars, S. P. | Applied Physics Letters | | | |
2002 | High speed and high power performances of LTG-GaAs based Metal-Semiconductor-Metal Traveling-Wave Photodetectors in 1.3 um wavelength regime | Shi, J.-W.; Chen, Y.-H.; Gan, K.-G.; Chiu, Y.-J.; Sun, C.-K.; Bowers, J. E. | IEEE Photonic Technology Letters | | | |
2004 | Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3 um telecommunication wavelength | Shi, J.-W.; Chen, Y.-H.; Gan, K.-G.; Bowers, J. E.; Chiu, Y.-J.; Tien, M.-C.; Liu, T.-M.; Sun, C.-K. | IEEE Photonics Technology Letters | | | |
1996 | Optical investigations of dynamic behavior of GaSb/GaAs quantum dots | Sun, C.-K.; Wang, G.; Bowers, J. E.; Brar, B.; Blank, H.-R.; Kroemer, H.; Pilkuhn, M. H. | Applied Physics Letters | | | |
1996 | Radiative recombination lifetime measurements of InGaN quantum wells | Sun, C.-K.; Keller, S.; Wang, G.; Minsky, M. S.; Bowers, J. E.; DenBaars, S. P. | Applied Physics Letters | | | |
1997 | Time-resolved photoluminescence studies of InGaN/GaN single-quantum-well at room temperature | Sun, C.-K.; Chiu, T.-L.; Keller, S.; Wang, G.; Minsky, M. S.; DenBaars, S. P.; Bowers, J. E. | Applied Physics Letters | | | |
2004 | Traveling-Wave Photodetectors with High Power-Bandwidth and Gain-Bandwidth Product Performance | D. Lasaosa, Shi, J.-W.; D. Pasquariello, Gan, K.-G.; Tien, M.-C.; Chang, H.-H.; Chu, S.-W.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | IEEE Journal of Selected Topics in Quantum Electronics | | | |
1998 | Ultrafast transport dynamics of p-i-n photodetectors under high power illumination | Sun, C.-K.; Tan, I-H.; Bowers, J. E. | IEEE Photonic Technology Letters | | | |
2004 | Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | Gan, K.-G.; Sun, C.-K.; DenBaars, S. P.; Bowers, J. E. | Applied Physics Letters | | | |
2002 | Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors | Gan, K.-G.; Shi, J.-W.; Chen, Y.-H.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | Applied Physics Letters | | | |
2002 | Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors | Shi, J.-W.; Gan, K.-G.; Chen, Y.-H.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | IEEE Photonic Technology Letters | | | |
1997 | Well-width dependent studies of InGaN/GaN single-quantum-well using time-resolved photoluminescence techniques | Sun, C.-K.; Keller, S.; Chiu, T.-L.; G. Wang, Minsky, M. S.; DenBaars, S. P.; Bowers, J. E. | IEEE Journal of Selected Topics in Quantum Electronics | | | |