公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist | M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 13 | 9 | |
2013 | Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 55 | 48 | |
2012 | Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits | M.-L. Fan; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 39 | 34 | |
2011 | Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity | M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 4 | 4 | |
2012 | Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking | M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Electron Device Letters | 14 | 10 | |
2013 | Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 22 | 20 | |
2013 | Design and Analysis of Robust Tunneling FET SRAM | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 36 | 30 | |
2016 | Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications | C.-H. Yu; M.-L. Fan; K.-C. Yu; Pin Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 16 | 17 | |
2014 | Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 | IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 46 | 38 | |
2014 | Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Circuits and Systems I: Regular Papers | 13 | 9 | |
2011 | FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics | M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 33 | 22 | |
2015 | Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits | Y.-N. Chen; C.-J. Chen; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU | Journal of Low Power Electronics and Applications | 9 | 0 | |
2015 | Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; C.-W. Hsu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 24 | 20 | |
2014 | Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits | M.-L. Fan; S.-Y. Yang; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU | Microelectronics Reliability | 23 | 22 | |
2014 | Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 8 | 6 | |
2009 | Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation | Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 7 | 5 | |
2013 | Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Electron Devices | 7 | 6 | |
2013 | Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Nanotechnology | 7 | 5 | |
2012 | Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications | M.-L. Fan; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Circuits and Systems II: Express Briefs | 17 | 12 | |