Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2003 | Advances in high 庥 gate dielectrics for Si and III-V semiconductors | Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
2000 | High 庰 gate dielectrics Gd<inf>2</inf>O<inf>3</inf>and Y<inf>2</inf>O<inf>3</inf>for silicon | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.T.; Chabal, Y.J.; Mannaerts, J.P.; Boone, T.; Krajewski, J.J.; Sergent, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Applied Physics Letters | 268 | 248 | |
2001 | Properties of high 庥 gate dielectrics Gd<inf>2</inf>O<inf>3</inf> and Y<inf>2</inf>O<inf>3</inf> for Si | Kwo, J.; Hong, M.; Kortan, A.R.; Queeney, K.L.; Chabal, Y.J.; Opila, R.L.; Muller, D.A.; Chu, S.N.G.; Sapjeta, B.J.; Lay, T.S.; Mannaerts, J.P.; Boone, T.; Krautter, H.W.; Krajewski, J.J.; Sergnt, A.M.; Rosamilia, J.M.; MINGHWEI HONG | Journal of Applied Physics | 268 | 251 | |