公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2008 | Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2 O 3/Ga 2 O 3 (Gd 2 O 3 as gate dielectrics | Lin, TD; Chen, Christine P; Chiu, HC; Chang, Peter; Lin, CA; MINGHWEI HONG ; Kwo, J; Tsai, W | Device Research Conference, 2008 |