| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | Achieving a low interfacial density of states in atomic layer deposited Al 2 O 3 on In 0.53 Ga 0.47 As | Chiu, HC; Tung, LT; Chang, YH; Lee, YJ; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
| 2005 | Acremonium pyomyositis in a pediatric patient with acute leukemia | Chang, YH; Huang, LM; Hsueh, PR; Hsiao, CH; Pehg, SF; 楊榮森; Lin, KH | Pediatr blood cancer | | | |
| 2023 | Ameliorating the prediction ability of laccase time temperature indicator for dynamic monitoring quality of fresh-cut papaya | Lin, CX; Lin, SB; SHIH-HSIN CHEN ; Hsu, HH; Chang, YH; Chen, HH | INTERNATIONAL JOURNAL OF FOOD SCIENCE AND TECHNOLOGY | | | |
| 2011 | Atomic-layer-deposited Al 2 O 3 and HfO 2 on GaN: a comparative study on interfaces and electrical characteristics | Chang, YC; Huang, ML; Chang, YH; Lee, YJ; Chiu, HC; Kwo, J; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
| 2012 | $\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
| 2012 | $\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces | Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
| 2005 | Cell apoptosis induced by a synthetic carbazole compound LCY-2-CHO is mediated through activation of caspase and mitochondrial pathways | Hsu, MJ; Chao, Y; Chang, YH; Ho, FM; Huang, LJ; Huang, YL; Luh, TY; Chen, CP; Lin, WW | BIOCHEMICAL PHARMACOLOGY | | | |
| 2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric | Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
| 2012 | Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition | Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
| 2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2 O 3 on freshly molecular beam epitaxy grown GaAs | Chang, YH; Huang, ML; Chang, P; Lin, CA; Chu, YJ; Chen, BR; Hsu, CL; Kwo, J; Pi, TW; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
| 2009 | Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
| 2009 | Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
| 1995 | Far-Infrared Magnetooptical Studies of D-Band in Doped Gaas-Algaas Multiple-Quantum-Well Structures | Chang, Yh; Lee, Ch; Hao, Hy; Sheu, Ym; Hu, Cd; CHONG-DER HU | Solid State Communications | 0 | 0 | |
| 2013 | Ferromagnetism in cluster free, transition metal doped high $κ$ dilute magnetic oxides: Films and nanocrystals | Wu, CN; Wu, TS; Huang, SY; Lee, WC; Chang, YH; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG | Journal of Applied Physics | | | |
| 2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al 2 O 3 as a template followed by atomic layer deposition growth | Chang, YH; Chiu, HC; Chang, WH; Kwo, J; Tsai, CC; Hong, JM; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 2012 | Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors | Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letters | | | |
| 2009 | High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric | Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; Hong, M; MINGHWEI HONG | Device Research Conference, 2009 | | | |
| 2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
| 2011 | In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2 O 3 on pristine n-GaAs (001)-4$\\times$ 6 surface | Chang, YH; Huang, ML; Chang, P; Shen, JY; Chen, BR; Hsu, CL; Pi, TW; Hong, Ma; Kwo, J; MINGHWEI HONG | Microelectronic Engineering | | | |
| 2012 | In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As | Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG | APS Meeting Abstracts | | | |
