公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2008 | Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling | Hoang J.; Hsu C.-C. ; Chang J.P. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 28 | 26 | |
2008 | Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models | Hsu C.-C. ; Hoang J.; Le V.; Chang J.P. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 10 | 9 | |
2013 | Feature profile evolution during shallow trench isolation etching in chlorine-based plasmas. III. the effect of oxygen addition | Hsu C.-C. ; Marchack N.; Martin R.M.; Pham C.; Hoang J.; Chang J.P. | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 4 |