公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2016 | Dual-functional memory and threshold resistive switching based on the push-pull mechanism of oxygen ions | Huang, Y.-J.; Chao, S.-C.; Lien, D.-H.; Wen, C.-Y.; He, J.-H.; SI-CHEN LEE ; CHENG-YEN WEN | Scientific Reports | 51 | 43 | |
2016 | Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO<inf>x</inf> films and its resistive switching characteristics | Huang, Y.-J.; Shih, I.-C.; Chao, S.-C.; Wen, C.-Y.; He, J.-H.; SI-CHEN LEE ; CHENG-YEN WEN | 2014 IEEE International Nanoelectronics Conference, INEC 2014 | 0 | 0 | |
1998 | Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs | Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Chao, S.-C.; Wu, K.-H.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | IEEE Journal of Quantum Electronics | 21 | 24 | |