| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2018 | A new stable, crystalline capping material for topological insulators | Lin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | APL Materials | 1 | 2 | |
| 2016 | Demonstration of large field effect in topological insulator films via a high-庥 back gate | Wang, C.Y.; Lin, H.Y.; Yang, S.R.; Chen, K.H.M.; Lin, Y.H.; Chen, K.H.; Young, L.B.; Cheng, C.K.; Fanchiang, Y.T.; Tseng, S.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 4 | |
| 2017 | Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y <inf>2</inf> O <inf>3</inf> /Al <inf>2</inf> O <inf>3</inf> on GaAs(001) | Lin, K.Y.; Young, L.B.; Cheng, C.K.; Chen, K.H.; Lin, Y.H.; Wan, H.W.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 1 | 2 | |
| 2015 | Epitaxial ferromagnetic Fe<inf>3</inf>Si on GaAs(111)A with atomically smooth surface and interface | Liu, Y.C.; Chen, Y.W.; Tseng, S.C.; Chang, M.T.; Lo, S.C.; Lin, Y.H.; Cheng, C.K.; Hung, H.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 3 | 6 | |
| 2017 | GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y<inf>2</inf>O<inf>3</inf> ??In comparison with atomic layer deposited Al<inf>2</inf>O<inf>3</inf> | Wan, H.W.; Lin, K.Y.; Cheng, C.K.; Su, Y.K.; Lee, W.C.; Hsu, C.H.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 4 | 4 | |
| 2018 | High-quality single-crystal thulium iron garnet films with perpendicular magnetic anisotropy by off-axis sputtering | Wu, C.N.; Tseng, C.C.; Lin, K.Y.; Cheng, C.K.; Yeh, S.L.; Fanchiang, Y.T.; Hong, M.; Kwo, J.; MINGHWEI HONG | AIP Advances | 12 | 18 | |
| 2018 | High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering ??correlation between magnetic properties and film strain | Wu, C.N.; Tseng, C.C.; Fanchiang, Y.T.; Cheng, C.K.; Lin, K.Y.; Yeh, S.L.; Yang, S.R.; Wu, C.T.; Liu, T.; Wu, M.; Hong, M.; Kwo, J.; MINGHWEI HONG | Scientific Reports | 20 | 33 | |
| 2015 | Single-crystal atomic layer deposited Y<inf>2</inf>O<inf>3</inf> on GaAs(0 0 1) - Growth, structural, and electrical characterization | Wu, S.Y.; Chen, K.H.; Lin, Y.H.; Cheng, C.K.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 18 | 19 | |
| 2017 | Single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A and (001) using atomic layer deposition | Cheng, C.K.; Young, L.B.; Lin, K.Y.; Lin, Y.H.; Wan, H.W.; Lu, G.J.; Chang, M.T.; Cai, R.F.; Lo, S.C.; Li, M.Y.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 2 | 2 | |
| 2015 | Single-Crystal Y <inf>2</inf> O <inf>3</inf> Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition | Lin, Y.H.; Cheng, C.K.; Chen, K.H.; Fu, C.H.; Chang, T.W.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Materials | 15 | 16 | |
| 2018 | Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi <inf>2</inf> Se <inf>3</inf> /yttrium iron garnet heterostructures | Fanchiang, Y.T.; Chen, K.H.M.; Tseng, C.C.; Chen, C.C.; Cheng, C.K.; Yang, S.R.; Wu, C.N.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG | Nature Communications | 20 | 42 | |
| 2019 | Topological insulator Bi <inf>2</inf> Se <inf>3</inf> films on rare earth iron garnets and their high-quality interfaces | Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 4 | 12 | |
| 2019 | Topological insulator Bi <inf>2</inf> Se <inf>3</inf> films on rare earth iron garnets and their high-quality interfaces | Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; CHIA-KUEN CHENG | Applied Physics Letters | | 12 | |
| 2017 | Van der Waals epitaxy of topological insulator Bi<inf>2</inf>Se<inf>3</inf> on single layer transition metal dichalcogenide MoS<inf>2</inf> | Chen, K.H.M.; Lin, H.Y.; Yang, S.R.; Cheng, C.K.; Zhang, X.Q.; Cheng, C.M.; Lee, S.F.; Hsu, C.H.; Lee, Y.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 8 | 14 | |
| 2004 | Wear behavior of UHMWPE sliding on artificial hip arthroplasty materials | Cho, H.J.; Wei, W.J.; Kao, H.C.; Cheng, C.K.; WEN-CHENG J. WEI | Materials Chemistry and Physics | 46 | 45 | |
