| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Applied Physics Letters | 48 | 42 | |
| 2010 | Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT | Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 2 | 0 | |
| 2009 | Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
| 2010 | Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealing | Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 10 | 10 | |
| 2008 | Approaching fermi level unpinning in oxide-in<inf>o.2</inf>ga<inf>o.8</inf>as | Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Electron Devices Meeting | 11 | 0 | |
| 2011 | Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG | Applied Physics Letters | 24 | 22 | |
| 2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 10 | 10 | |
| 2011 | Direct measurement of interfacial structure in epitaxial Gd <inf>2</inf>O<inf>3</inf> on GaAs (0 0 1) using scanning tunneling microscopy | Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Microelectronic Engineering | 2 | 2 | |
| 2011 | Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (0 0 1) using scanning tunneling microscopy | Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; YA-PING CHIU | Microelectronic Engineering | 2 | 2 | |
| 2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 25 | 24 | |
| 2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
| 2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
| 2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 1 | 3 | |
| 2012 | Ge metal-oxide-semiconductor devices with Al <inf>2</inf>O <inf>3</inf>/Ga <inf>2</inf>O <inf>3</inf>(Gd <inf>2</inf>O <inf>3</inf>) as gate dielectric | Chu, L.K.; Chiang, T.H.; Lin, T.D.; Lee, Y.J.; Chu, R.L.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 4 | 4 | |
| 2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 9 | 10 | |
| 2015 | In-situ atomic layer deposition of tri-methylaluminum and water on pristine single-crystal (In)GaAs surfaces: Electronic and electric structures | Pi, T.W.; Lin, Y.H.; Fanchiang, Y.T.; Chiang, T.H.; Wei, C.H.; Lin, Y.C.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanotechnology | 14 | 14 | |
| 2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd <inf>2</inf> O <inf>3</inf> dielectrics | Lin, C.A.; Huang, M.L.; Chiu, P.-C.; Lin, H.-K.; Chyi, J.-I.; Chiang, T.H.; Lee, W.C.; Chang, Y.C.; Chang, Y.H.; Brown, G.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 3 | 4 | |
| 2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
| 2013 | Interfacial electronic structure of trimethyl-aluminum and water on an In<inf>0.20</inf>Ga<inf>0.80</inf>As(001)-4 ? 2 surface: A high-resolution core-level photoemission study | Pi, T.W.; Lin, H.Y.; Chiang, T.H.; Liu, Y.T.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Applied Physics | 7 | 7 | |
| 2011 | Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. | Journal of Crystal Growth | 2 | 2 | |
