Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 60 | 52 | |
2009 | Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
2011 | Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET | Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 2 | |
2011 | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 72 | 73 | |
2011 | Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG | Applied Physics Letters | 26 | 23 | |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | 3 | |
2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 11 | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth | Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 14 | 14 | |
2008 | High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; MINGHWEI HONG ; Kwo, J.; Tsai, W.; Wang, Y.C. | Applied Physics Letters | 142 | 123 | |
1998 | Incoherent magnetization reversal process in discontinuous Fe50Co50/Ag multilayer thin films | Kuo, P.C.; Yao, Y.D.; Chen, J.W.; Chiu, H.C. | IEEE Transcations on Magnetics | | | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2009 | InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as a gate dielectric | Lin, T.D.; Chiu, H.C.; Chang, P.; Lee, W.C.; Chinag, T.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectrics | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Device Research Conference | 1 | 0 | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Tung, L.T.; Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; MINGHWEI HONG ; Tsai, C.C. | Applied Physics Letters | 69 | 52 | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al <inf>2</inf>O<inf>3</inf> as gate dielectric | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Chang, Y.H.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 2 | 0 | |
2011 | Low interfacial density of states around midgap in MBE-Ga<inf>2</inf>O <inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. | Journal of Crystal Growth | 2 | 2 | |
2007 | MBE grown high 庥 dielectrics Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) on GaN | Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 46 | 45 | |