公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1997 | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Solid-State Electronics | 167 | 153 | |
1999 | Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | IEEE Electron Device Letters | 60 | 57 | |
1999 | Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> )/GaAs power MOSFETs | Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG | Electronics Letters | 18 | 18 | |
2000 | Properties of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/GaN metal-insulator-semiconductor diodes | Hong, M.; Anselm, K.A.; Kwo, J.; Ng, H.M.; Baillargeon, J.N.; Kortan, A.R.; Mannaerts, J.P.; Cho, A.Y.; Lee, C.M.; Chyi, J.I.; Lay, T.S.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 62 | 60 | |
2002 | Single-crystal GaN/Gd<inf>2</inf>O<inf>3</inf>/GaN heterostructure | Hong, M.; Kwo, J.; Chu, S.N.G.; Mannaerts, J.P.; Kortan, A.R.; Ng, H.M.; Cho, A.Y.; Anselm, K.A.; Lee, C.M.; Chyi, J.I.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 35 | 40 | |
1997 | Wet chemical and plasma etching of Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) | Ren, F.; Hong, M.; Mannaerts, J.P.; Lothian, J.R.; Cho, A.Y.; MINGHWEI HONG | Journal of the Electrochemical Society | 27 | 24 | |