| 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; MIIN-JANG CHEN ; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 7 | 0 | |
| 2017 | High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications | Lee, Y.-J.; Hong, T.-C.; Hsueh, F.-K.; Sung, P.-J.; Chen, C.-Y.; Chuang, S.-S.; Cho, T.-C.; Noda, S.; Tsou, Y.-C.; Kao, K.-H.; Wu, C.-T.; Yu, T.-Y.; Jian, Y.-L.; Su, C.-J.; Huang, Y.-M.; Huang, W.-H.; Chen, B.-Y.; Chen, M.-C.; Huang, K.-P.; Li, J.-Y.; Chen, M.-J.; Li, Y.; Samukawa, S.; Wu, W.-F.; Huang, G.-W.; Shieh, J.-M.; Tseng, T.-Y.; Chao, T.-S.; Wang, Y.-H.; Yeh, W.-K.; JIUN-YUN LI | Technical Digest - International Electron Devices Meeting, IEDM | 7 | 0 | |
