| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2021 | Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure | Chen D; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; JIUN-YUN LI | Applied Physics Letters | 0 | 0 | |
| 2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 9 | 7 | |
| 2021 | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Liu C.-Y; Chuang Y; Tai C.-T; Kao H.-S; Tien K.-Y; Li J.-Y.; JIUN-YUN LI | LEOS Summer Topical Meeting | 0 | 0 | |
| 2020 | Post-growth modulation doping by ion implantation | Chiu P.-Y; Lidsky D; Chuang Y; Su Y.-H; Li J.-Y; Harris C.T; Lu T.M.; JIUN-YUN LI | Applied Physics Letters | 0 | 0 | |
| 2021 | Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation | Chuang Y; Liu C.-Y; Kao H.-S; Tien K.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | ACS Applied Electronic Materials | 10 | 8 | |
| 2018 | Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime | Chou C.-T; Jacobson N.T; Moussa J.E; Baczewski A.D; Chuang Y; Liu C.-Y; Li J.-Y; Lu T.M.; JIUN-YUN LI | Nanoscale | 12 | 8 |
