公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2020 | High Electron Mobility of 1880 cm2V-S In0.17Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer | Luo Y.J; Sanyal I; Tzeng W.-C; Ho Y.-L; Chang Y.-C; Hsu C.-C; Chyi J.-I; CHAO-HSIN WU | 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 |