公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | Annealing Effect on the Formation of In(Ga)As Quantum Rings From InAs Quantum Dots | Dai, J.-H.; Lee, J.-H.; SI-CHEN LEE | IEEE Photonics Technology Letters | 12 | 10 | |
2009 | In(Ga)As quantum ring terahertz photodetector with cutoff wavelength at 175 μm | Lee, J.-H.; Dai, J.-H.; Chan, C.-F.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 9 | 6 | |
2008 | In(Ga)As quantum rings for terahertz detectors | Dai, J.-H.; Lee, J.-H.; Lin, Y.-L.; SI-CHEN LEE | Japanese Journal of Applied Physics | 29 | 28 | |
2007 | The influence of InAs coverage on the performances self-assembled InGaAs quantum rings | Huang, C.-Y.; Wu, M.-C.; Lin, S.-Y.; Dai, J.-H.; SI-CHEN LEE | Journal of Crystal Growth | 3 | 3 | |
2008 | Transition mechanism of InAs quantum dot to quantum ring revealed by photoluminescence spectra | Dai, J.-H.; Lee, J.-H.; Lee, S.-C.; SI-CHEN LEE | IEEE Photonics Technology Letters | 9 | 7 | |
2007 | Voltage-Tunable Dual-Band In(Ga)As Quantum-Ring Infrared Photodetector | Dai, J.-H.; Lin, Y.-L.; SI-CHEN LEE | IEEE Photonics Technology Letters | 13 | 12 | |