| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2006 | 10-Gb/s operation of an In<inf>0.53</inf> Ga<inf>0.47</inf> As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, K.-M.; Feng, M.; GONG-RU LIN | IEEE Photonics Technology Letters | 8 | 0 | |
| 2006 | 10-Gb/s operation of an In<inf>0.53</inf> Ga<inf>0.47</inf> As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, K.-M.; Feng, M.; GONG-RU LIN | IEEE Photonics Technology Letters | 8 | 5 | |
| 2006 | A 10-Gbps in<inf>0.53</inf>Ga<inf>0.47</inf>As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, K.-M.; Feng, M.; GONG-RU LIN | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 | 1 | 0 | |
| 2005 | 10Gbps operation of a metamorphic InGaP buffered in<inf>0.53</inf>Ga <inf>0.47</inf>As p-i-n photodetector grown on GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Lin, C.-K.; Chu, Y.-S.; Kuo, H.-C.; Feng, M.; GONG-RU LIN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
| 2005 | 10Gbps operation of a metamorphic InGaP buffered in<inf>0.53</inf>Ga<inf>0.47</inf>As p-i-n photodetector grown on GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Lin, C.-K.; Chu, Y.-S.; Kuo, H.-C.; Feng, M.; GONG-RU LIN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
| 2009 | 4-GHz modulation bandwidth of integrated 2 × 2 LED array | Wu, C.-H.; Walter, G.; Then, H.W.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU | IEEE Photonics Technology Letters | 5 | 4 | |
| 2009 | 4.3 GHz optical bandwidth light emitting transistor | Walter, G.; Wu, C.H.; Then, H.W.; Feng, M.; Holonyak, N.; CHAO-HSIN WU | Applied Physics Letters | 57 | 37 | |
| 2018 | 50 Gb/s Error-Free Data Transmission Using a NRZ-OOK Modulated 850 nm VCSEL | Wu, C.-H.; Huang, T.-Y.; Qiu, J.; Fu, W.; Peng, C.-Y.; Shih, T.-T.; Huang, J.-J.; Kuo, H.-C.; Lin, G.-R.; Cheng, W.-H.; Feng, M.; Wu, C.-H.; GONG-RU LIN | European Conference on Optical Communication, ECOC | 7 | 0 | |
| 2018 | 50 Gb/s Error-Free Data Transmission Using a NRZ-OOK Modulated 850 nm VCSEL | Wu, C.-H.; Huang, T.-Y.; Qiu, J.; Fu, W.; Peng, C.-Y.; Shih, T.-T.; Huang, J.-J.; Kuo, H.-C.; Lin, G.-R.; Cheng, W.-H.; Feng, M.; Wu, C.-H.; CHAO-HSIN WU | European Conference on Optical Communication, ECOC | 7 | 0 | |
| 2006 | A 10-Gbps in<inf>0.53</inf>Ga<inf>0.47</inf>As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate | Liao, Y.-S.; Lin, G.-R.; Kuo, H.-C.; Feng, K.-M.; Feng, M.; GONG-RU LIN | Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 | 1 | 0 | |
| 2006 | A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate | Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN | Optics InfoBase Conference Papers | | | |
| 2005 | A low-dark-current ingaas photodetector made on metamorphic ingap buffered gaas substrate | Lin, C.-K.; Kuo, H.-C.; Lin, G.-R.; Feng, M.; GONG-RU LIN | Optics InfoBase Conference Papers | | | |
| 2020 | Comparison of High-Speed PAM4 and QAM-OFDM Data Transmission Using Single-Mode VCSEL in OM5 and OM4 MMF Links | Huang, C.-Y.; Wang, H.-Y.; Wu, C.-H.; Cheng, C.-H.; Tsai, C.-T.; Wu, C.-H.; Feng, M.; Lin, G.-R.; GONG-RU LIN | IEEE Journal of Selected Topics in Quantum Electronics | 12 | 14 | |
| 2020 | Comparison on OM5-MMF and OM4-MMF Data Links with 32-GBaud PAM-4 Modulated Few-Mode VCSEL at 850 nm | Huang, C.-Y.; Wang, H.-Y.; Wu, C.-H.; Lo, W.-C.; Tsai, C.-T.; Wu, C.-H.; Feng, M.; Lin, G.-R.; GONG-RU LIN | Journal of Lightwave Technology | 8 | 7 | |
| 2010 | Design and layout of multi ghz operation of light emitting diodes | Wu, C.-H.; Walter, G.; Then, H.W.; Feng, M.; CHAO-HSIN WU | 2010 International Conference on Compound Semiconductor Manufacturing Technology | | | |
| 2004 | Device technologies for RF front-end circuits in next-generation wireless communications | Feng, M.; Shen, Shyh-Chiang; Caruth, D.C.; Huang, J.-J. | Proceedings of the IEEE | | |  |
| 2009 | Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser | Then, H.W.; Wu, C.H.; Walter, G.; Feng, M.; Holonyak, N.; CHAO-HSIN WU | Applied Physics Letters | 35 | 26 | |
| 2011 | Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission | Tan, F.; Wu, C.H.; Feng, M.; Holonyak Jr.; N.; CHAO-HSIN WU | Applied Physics Letters | 19 | 15 | |
| 2007 | Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping | Then, H.W.; Feng, M.; Holonyak, N.; Wu, C.H.; CHAO-HSIN WU | Applied Physics Letters | 33 | 27 | |
| 2017 | High-speed visible light communication using GaN-based light-emitting diodes with photonic crystals | Yin, Y.-F.; Lan, W.-Y.; Lin, T.-C.; Wang, C.; Feng, M.; Huang, J.-J.; JIAN-JANG HUANG | Journal of Lightwave Technology | 24 | 21 | |
