公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | 3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption | CHEE-WEE LIU ; Zheng, W.; Feng, Z.C.; Zheng, R.S.; Jang, L.-Y.; CHEE-WEE LIU | Materials Science Forum | | | |
2006 | Anisotropic Properties of GaN Studied by Raman Scattering | Lin, H.C.; Feng, Z.C.; Chen, M.S.; Shen, Z.X.; Lu, W.; Collins, W.E. | Materials Science Forum 527-529: | | | |
1993 | Anomalous temperature behavior of Raman spectra from visible light emitting porous Si | Feng, Z.C.; Payne, J.R.; Covington, B.C. | Solid State Commun | | | |
2006 | Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing | Zhao, J.; Chen, J.; Feng, Z.C.; Chen, J.L.; Liu, R.; Xu, G. | Thin Solid Films | | | |
1996 | Characterization of lead lanthanum titanate thin films grown on fused quartz using MOCVD | Chen, H.Y.; Lin, J.; Tan, K.L.; Feng, Z.C. | Thin Solid Films | | | |
2006 | Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile | Feng, Z.C.; Yu, J.W.; Li, K.; Feng, Y.P.; Padmanabhan, K.R.; Yang, T.R. | Surface and Coatings Technology | | | |
1995 | Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapor deposition | Feng, Z.C.; Tin, C.C.; Hu, R.; Yue, K.T. | Semicond. Sci. & Tech | | | |
1993 | Compositional dependence of optical phonon frequencies in AlxGa1-xAs | Feng, Z.C.; Perkowitz, S.; Kinnel, D.K.; Whitney &, R.L.; Talwar, D.N. | Phys. Rev. B | | | |
1994 | A Comprehensive Analysis of Porous Silicon by Surface & Optical Techniques | Feng, Z.C.; Wee, A.T.S.; Tang, S.H.; Tan, K.L.; Payne, J.R.; Pucket &, B.; DuVarney, R. | Trans.Mat.Res.Soc.Jpn.,19A | | | |
2016 | Continuous-wave and time-resolved photoluminescence of GaN LED grown on amorphous SiC buffer | Cheng, C.-H.; Chen, S.; Wan, L.; Feng, Z.C.; GONG-RU LIN | Asia Communications and Photonics Conference, ACP | | | |
2006 | Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition | Yu, J.W.; Lin, H.C.; Feng, Z.C.; Wang, L.S.; Tripathy, S.; Chua, S.J. | Thin Solid Films | | | |
1996 | Correlations between the MOCVD-grown CdTe/CdS/SnO2/glass solar cell efficiencies and the interface/surface properties | Feng, Z.C.; Chou, H.C.; Rohatgi, A.; Lim, G.K.; Wee, A.T.S.; Tan, K.L. | J. Appl. Phys | | | |
1993 | Difference Raman spectra of PbTiO3 thin films grown by metalorganic chemical vapor deposition | Feng, Z.C.; Kwak, B.S.; Erbil &, A.; Boatner, L.A. | Appl. Phys. Lett | | | |
1998 | Effects of Al-C ion-implantation and annealing in epitaxial 6H-SiC studied by structural and optical techniques | Feng, Z.C.; Ferguson, I.; Stall, R.A.; Li, K.; Shi, Y.; Singh, H.; Tone, K.; Zhao, J.H.; Wee, A.T.S.; Tan, K.L.; Adar, F.; Lenain, B. | Materials Science Forum | | | |
1984 | The eigenequation of angular momentum operator induced in spherical coordinates | Feng, Z.C. | University Physics | | | |
1992 | Far infrared analysis of In1-xGaxSb thin films on GaAs grown by metalorganic magnetron sputtering | Macler, M.; Feng, Z.C.; Perkowitz, S.; Rousina, R.; Webb, J.B. | Phys. Rev. B | | | |
1983 | Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures | Feng, Z.C.; Liu, H.D. | J. Appl. Phys | | | |
1990 | Growth of textured diamond films on Si (100) by C2H2/O2 flame method | Hwang, J.; Zhang, K.; Kwak, B.S.; Erbil, A.; Feng, Z.C. | J. Materials Research | | | |
1997 | How to distinguish the Raman modes of epitaxial GaN with phonon features from sapphire substrate | Feng, Z.C.; Schurman, M.; Stall, R.A. | J. Vac. Sci. Technol. A | | | |
2016 | Indium and nitrogen K-edge X-ray absorption spectroscopy of In <inf>x</inf> Ga <inf>1-x</inf> N | Li, X.; Chang, C.M.; Hsueh, C.-H.; Lee, Z.-F.; Chen, J.-M.; Lin, H.-H.; Wang, X.; Dietz, N.; Guan, Y.-J.; Feng, Z.C.; HAO-HSIUNG LIN | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 | 0 | 0 | |