公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2002 | 1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE | L. W. Sung; G. Tsai; HAO-HSIUNG LIN | OPT’02 | |||
2002 | 1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE | L. W. Sung; G. Tsai; HAO-HSIUNG LIN | 2002 IEDMS | |||
2008 | Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | |||
2009 | Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 7 | ||
2008 | Band alignment of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2007 | Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10 | I. C. Chen; G. Tsai; HAO-HSIUNG LIN | International electron devices and materials symposia | |||
2008 | Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Thin Solid Films | 11 | 11 | |
2011 | Extended X-ray absorption fine structure of InAsPSb | C. J. Wu; G. Tsai; Z. C. Feng; HAO-HSIUNG LIN | 23rd international conference on indium phosphide and related materials (IPRM 2011) | |||
2003 | Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy | G. Tsai; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | |||
2005 | Growth of InPSb on InAs inside a miscibility gap using gas source MBE | G. Tsai; HAO-HSIUNG LIN | OPT2005 | |||
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | |||
2007 | InAsPSb quaternary alloy grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. J. Wu; Y. T. Lin; HAO-HSIUNG LIN | Journal of Crystal Growth | 10 | 9 | |
2006 | InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy | G. Tsai; D. L. Wang; C. E. Wu; C. R. Wu; Y. T. Lin; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2009 | InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN | |||
2007 | InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy | C. J. Wu; G. Tsai; D. L. Wang; HAO-HSIUNG LIN | 8th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-8) | |||
2005 | InPSb bulk layers grown by gas source molecular beam epitaxy | G. Tsai; HAO-HSIUNG LIN | Mid-infrared optoelectronics: Materials and Devices (MIOMD 7) | |||
2004 | MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications | G. Tsai; HAO-HSIUNG LIN | OPT 2004 | |||
2006 | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | A. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 22 | 19 | |
2006 | Mid-infrared InAsPSb/InAsSb quantum-well light emitter | C. E. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | |||
2007 | Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters |