公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2002 | 1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE | L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | OPT’02 | |||
2004 | 1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | P. W. Liu; G. H. Liao; H. H. Lin; HAO-HSIUNG LIN | Electronics Letters. | 6 | 4 | |
2003 | 1.3m GaAsSb/GaAs single quantum well laser diode | G. H. Liao; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN | OPT’03 | |||
2002 | 1.3m InAs/InGaAs quantum dot lasers grown by GSMBE | F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN | 2002 IEDMS | |||
2002 | 1.3m InGaAsN quantum well laser grown by plasma assisted gas source MBE | L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | 2002 IEDMS | |||
1999 | 1.55m asymmetric coupled quantum well structure for laser-modulator integration | L. W. Sung; J. S. Wang; H. P. Shiao; C. Y. Wang; I. F. Jang; T. T. Shih; Y. K. Tu; H. H. Lin; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | |||
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; C. T. Wan; H. H. Lin; HAO-HSIUNG LIN | Microelectronics Journal | 7 | 6 | |
2006 | [111]B-oriented GaAsSb grown by gas source molecular beam epitaxy | L. C. Chou; Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN | 6th international workshop on epitaxial semiconductors on patterned substrates and novel index surface (ESPS-NIS) | 7 | 6 | |
2007 | [111]B-oriented GaAsSb/GaAs quantum wells grown by gas-source molecular beam epitaxy | L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2007 | |||
2009 | A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species | Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | |||
2003 | A study of optical properties of InGaAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN | Journal of the Korean Physical Society | |||
2012 | A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells | H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN | International electron devices and materials symposium | |||
2006 | A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | OPT2006 | |||
2001 | (AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications | S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN | IEEE Transactions on Electron Devicess | |||
2009 | Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye | H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN | ||||
2008 | Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | International conference on optics and photonics in Taiwan (OPT’08) | |||
2009 | Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 7 | |
2008 | Band alignment of InAsSb/InAsPSb quantum well | C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN | MBE Taiwan 2008 | |||
2008 | Band alignment of InAsSb/InAsPSb quantum wells | C. J. Wu; H. H. Lin; HAO-HSIUNG LIN | 9th international conference on mid-infrared optoelectronics: materials and devices (MIOMD-9) | |||
2014 | Band discontinuity in InAsPSb alloy system | C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN | MIOMD 2014 infrared optoelectronics: materials and devices |