公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2004 | Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments | Lee, S.W.; Chen, L.J.; Chen, P.S.; Tsai, M.-J.; Liu, C.W.; Chen, W.Y.; Hsu, T.M.; CHEE-WEE LIU | Applied Surface Science | | | |
1998 | Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs | Lin, G.-R.; Chen, W.-C.; Chang, C.-S.; Chao, S.-C.; Wu, K.-H.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | IEEE Journal of Quantum Electronics | 21 | 24 | |
1997 | Near-bandgap ultrafast optical responses of furnaceannealed aresonic-ion-implanted GaAs | Lin, G.-R.; Pan, C.-L.; Hsu, T.M.; Lee, W.C.; GONG-RU LIN | Lasers and Electro-Optics Society Annual Meeting-LEOS | | | |
1998 | Observation of coulomb staircases in arsenic precipitates in low-temperature grown GaAs | JEN-CHEN FAN ; Yong, B.L.; Yang, Y.C.; Chen, Y.F.; Lee, W.C.; Hsu, T.M. | Physica Status Solidi (A) Applied Research | | | |