| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2010 | 100 GHz Ga2O3/GaN single nanowire metal-oxide-semiconductor transistor | J.-W. Yu; Y.-R. Wu; J.-J. Huang; L.-H. Peng; LUNG-HAN PENG | 2010 IEEE International Electron Devices Meeting (IEDM) | |||
| 2010 | 75GHz Ga2O3/GaN single nanowire metal-oxide-semiconductor transisto | J.-W. Yu; Y.-R. Wu; J.-J. Huang; L.-H. Peng; JIAN-JANG HUANG ; LUNG-HAN PENG | 32nd IEEE Compound Semiconductor IC symposium | 0 | 0 | |
| 2008 | DC characteristic and high frequency response of GaN Nanowire Metal-Oxide-Semiconductor Field-effect Transistor | J.-W. Yu; H.-M. Wu; B.-C. Yeh; L.-H. Peng; LUNG-HAN PENG | International Workshop on Nitride Semiconductor 2008 | |||
| 2009 | “DC characteristics and high frequency response from GaN nanowire metal-oxide-semiconductor field-effect transistor,” | J.-W. Yu; H.-M. Wu; B.-C. Yeh; L.-H. Peng; LUNG-HAN PENG | Physica Status Solidi (C) Current Topics in Solid State Physics | 1 | 0 | |
| 2007 | Enhanced carrier transportation on passivated gallium nitride single nanowire field-effect transistor | J.-W. Yu; H.-M. Wu; L.-H. Peng; LUNG-HAN PENG | 211th Meeting of the Electrochemical Society 2007 | |||
| 2012 | High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures | S.-L. Wang; J.-W. Yu; P.-C. Yeh; H.-W. Kuo; L.-H. Peng; A. A. Fedyanin; E. D. Mishina; A. S Sigov; LUNG-HAN PENG | Applied Physics Letters | 11 | 11 | |
| 2011 | High-speed GaN/Ga2O3 nanowire MOSFET | J.-W. Yu; Y.-R. Wu; C.-Y. Chen; L.-J. Chou; A. A. Fedyanin; E. D. Mishina; A. S. Sigov; L.-H. Peng; LUNG-HAN PENG | Symposium E3 of Optoelectronic and Photonic related materials at International Union of Materials Research Societie |
