Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
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2018 | Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices | E. Bussmann; J. K. Gamble; J. C. Koepke; D. Laroche; S. H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; B. S. Swartzentruber; M. P. Lilly; M. S. Carroll; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Physical Review Materials | 2 | 1 | |
2017 | Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system | T. M. Lu; L. A. Tracy; D. Laroche; S. –H. Huang; Y. Chuang; Y. –H Su; Jiun-Yun Li; CHEE-WEE LIU ; JIUN-YUN LI ; CHEE-WEE LIU | Scientific Reports | 8 | 7 | |
2017 | Effective g factor of low-density two-dimensional holes in a Ge quantum well | T. M. Lu; C. T. Harris; S. –H. Huang; Y. Chuang; Jiun-Yun Li; CHEE-WEE LIU ; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 12 | 11 | |
2017 | Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures | Yi-Hsin Su; Yen Chuang; Chia-You Liu; T. M. Lu; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | Physical Review Materials | 21 | 16 | |
2015 | Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well | JIUN-YUN LI; JIUN-YUN LI | ||||
2018 | High-mobility GeSn n-channel MOSFETs by low-temperature chemical vapor deposition and microwave annealing | Tzu-Hung Liu; Yen Chuang; Po-Yuan Chiu; Chia-You Liu; Cheng-Hong Shen; Guang-Li Lou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 19 | 14 | |
2016 | Magneto-transport analysis of an ultra-low density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure | D. Laroche; S. –H. Huang; Y. Chuang; C. W. Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 19 | 18 | |
2017 | Memory Cell with Functions of Storage Element and Selector | Ming-Yi Yan; Jhih-You Lu; Hsien-Chih Huang; Yun-Shiuan Li; Jiun-Yun Li; I-Chun Cheng; Chih-Ming Lai; Yue-Lin Huang; Lung-Han Peng; I-CHUN CHENG | ||||
2015 | Scattering mechanism in shallow undoped Si/SiGe quantum wells | D. Laroche; S. –H. Huang; E. Nielsen; Y. Chuang; Jiun-Yun Li; C. W. Liu; T. M. Lu; JIUN-YUN LI ; CHEE-WEE LIU | AIP Advances | 21 | 17 | |
2014 | Screening of remote charge scattering sites from the oxide/silicon interface of strained two-dimensional electron gases by an intermediate tunable shielding electron layer | C. T. Huang; Jiun-Yun Li; K. S. Chou; J. C. Sturm; JIUN-YUN LI ; JIUN-YUN LI | Applied Physics Letters | 10 | 9 | |
2019 | Single and double hole quantum dots in strained Ge/SiGe quantum wells | W. Hardy; C. Harris; Yi-Hsin Su; Yen Chuang; J. Moussa; L. Maurer; Jiun-Yun Li; T. M. Lu; D. Luhman; JIUN-YUN LI ; 李峻霣 | Nanotechnology | 22 | 22 | |
2004 | Stimulated emission in a nano-structured silicon pn junction diode using current injection | JIUN-YUN LI; JIUN-YUN LI | Applied Physics Letters | |||
2018 | Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure | Kuan-Yu Chou; Nai-Wen Hsu; Yi-Hsin Su; Chung-Tao Chou; Po-Yuan Chiu; Yen Chuang; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | Applied Physics Letters | 7 | 6 | |
2017 | A U-gate InGaAs/GaAsSb heterojunction TFET of tunneling normal to the gate with separate control over ON- and OFF-state current | Pao-Chuan Shih; Wei-Chih Hou; Jiun-Yun Li; JIUN-YUN LI ; 李峻霣 | IEEE Electron Device Letters | 28 | 28 | |
2018 | Weak antilocalization in undoped Ge/GeSi heterostructures beyond the diffusive regime | Chung-Tao Chou; N. T. Jacobson; J. E. Moussa; A. D. Baczewski; Yen Chuang; Chia-You Liu; Jiun-Yun Li; T. M. Lu; JIUN-YUN LI ; 李峻霣 | Nanoscale | |||
2016 | Widely tunable integrated mid-infrared quantum cascade lasers using super-structure grating reflectors | Dingkai Guo; Jiun-Yun Li; Liwei Cheng; Xing Chen; Terry Worchesky; Fow-Sen Choa; JIUN-YUN LI ; 李峻霣 | Photonics | 3 | 0 |