| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2008 | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Applied Physics Letters | 51 | 43 | |
| 2018 | A new stable, crystalline capping material for topological insulators | Lin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | APL Materials | 6 | 6 | |
| 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 46 | 40 | |
| 2008 | Achieving a low interfacial density of states in atomic layer deposited Al<inf>2</inf> O<inf>3</inf> on In<inf>0.53</inf> Ga<inf>0.47</inf> As | Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 59 | 51 | |
| 2010 | Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT | Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 2 | 0 | |
| 2009 | Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
| 2011 | Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET | Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 2 | |
| 2005 | Advanced high 庥 dielectrics for nano-electronics - Science and technologies | Hong, M.; Kwo, J.; MINGHWEI HONG | ECS Transactions | 4 | 0 | |
| 2003 | Advances in high 庥 gate dielectrics for Si and III-V semiconductors | Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG | Journal of Crystal Growth | | 0 | |
| 2009 | Advances on III-V MOSFET for science and technology beyond Si CMOS | Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; MINGHWEI HONG ; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
| 2010 | Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation on In<inf>0.20</inf>Ga <inf>0.80</inf>As/GaAs - Structural intactness with high-temperature annealing | Lee, Y.J.; Lee, C.H.; Tung, L.T.; Chiang, T.H.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 10 | 10 | |
| 2017 | Analysis of border and interfacial traps in ALD-Y<inf>2</inf>O<inf>3</inf> and -Al<inf>2</inf>O<inf>3</inf> on GaAs via electrical responses - A comparative study | Chang, T.W.; Lin, K.Y.; Lin, Y.H.; Young, L.B.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 10 | |
| 2008 | Approaching fermi level unpinning in oxide-in<inf>o.2</inf>ga<inf>o.8</inf>as | Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Electron Devices Meeting | 12 | 0 | |
| 2018 | Atom-to-atom interaction of O <inf>2</inf> with epi Ge(001)-2 ? 1 in elucidating GeO <inf>x</inf> formation | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 5 | 6 | |
| 2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study | Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanoscale Research Letters | | 0 | |
| 2017 | Atomic layer deposited single-crystal hexagonal perovskite YAlO<inf>3</inf> epitaxially on GaAs(111)A | Young, L.B.; Cheng, C.-K.; Lu, G.-J.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Li, M.-Y.; Cai, R.-F.; Lo, S.-C.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG ; CHIA-KUEN CHENG | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
| 2018 | Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | ACS Omega | 5 | 6 | |
| 2017 | Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study | Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Surface Science | 7 | 7 | |
| 2011 | Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics | Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 68 | 69 | |
| 2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG | Applied Physics Letters | 116 | 100 | |
