公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2015 | Asymmetric keep-out zone of through-silicon via using 28-nm technology node | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 2 | |
2014 | Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors | Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 12 | 12 | |
2011 | Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers | Lan, H.-S.; Chan, S.-T.; Cheng, T.-H.; Chen, C.-Y.; Jan, S.-R.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 22 | 20 | |
2016 | Compact modeling and simulation of TSV with experimental verification | Yan, J.-Y.; Jan, S.-R.; Huang, Y.-C.; Lan, H.-S.; Liu, C.W.; Huang, Y.-H.; Hung, B.; Chan, K.-T.; Huang, M.; Yang, M.-T.; CHEE-WEE LIU | 2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 | 1 | 0 | |
2014 | Electron ballistic current enhancement of Ge<inf>1-x</inf>Sn<inf>x</inf> FinFETs | Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU | 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 | 0 | 0 | |
2011 | Electron scattering in Ge metal-oxide-semiconductor field-effect transistors | Lan, H.-S.; Chen, Y.-T.; Hsu, W.; Chang, H.-C.; Lin, J.-Y.; Chang, W.-C.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 13 | 11 | |
2016 | Hole effective mass of strained Ge <inf>1-x</inf> Sn <inf>x</inf> alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates | Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU | ECS Transactions | 2 | 0 | |
2012 | Hole mobility boost of Ge p-MOSFETs by composite uniaxial stress and biaxial strain | Lan, H.-S.; Chen, Y.-T.; Lin, J.-Y.; Liu, C.W.; CHIH-WEN LIU | ECS Transactions | 1 | 0 | |
2015 | In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring I<inf>on</inf> = 828 μa/μm, I<inf>on</inf>/I<inf>off</inf> ? 1×10<sup>5</sup>, DIBL= 16-54 mV/V, and 1.4X external strain enhancement | Wong, I.-H.; Chen, Y.-T.; Huang, S.-H.; Tu, W.-H.; Chen, Y.-S.; Shieh, T.-C.; Lin, T.-Y.; Lan, H.-S.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | 7 | 0 | |
2011 | Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates | Chen, Y.-T.; Lan, H.-S.; Hsu, W.; Fu, Y.-C.; Lin, J.-Y.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 10 | 9 | |
2010 | Strain-enhanced photoluminescence from Ge direct transition | Cheng, T.-H.; Peng, K.-L.; Ko, C.-Y.; Chen, C.-Y.; Lan, H.-S.; YUH-RENN WU ; CHEE-WEE LIU ; Tseng, H.-H. | Applied Physics Letters | 81 | 70 | |
2011 | Theoretical and experimental demonstration of electronic state of GeO 2 | Chang, H.-C.; Lu, S.-C.; Chang, W.-C.; Chou, T.-P.; Lan, H.-S.; Lin, C.-M.; Liu, C.W.; CHIH-WEN LIU | ECS Transactions | 0 | 0 | |