公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT | Chu, L.K.; Chu, R.L.; Lin, C.A.; Lin, T.D.; Chiang, T.H.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 2 | 0 | |
2009 | Achieving nearly free fermi-level movement and V<inf>th</inf>engineering in Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.2</inf>Ga<inf>0.8</inf>As | Lin, T.D.; Wu, Y.D.; Chang, Y.C.; Chiang, T.H.; Chuang, C.Y.; Lin, C.A.; Chang, W.H.; Chiu, H.C.; Tsai, W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
2011 | Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET | Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 2 | |
2009 | Advances on III-V MOSFET for science and technology beyond Si CMOS | Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2008 | Approaching fermi level unpinning in oxide-in<inf>o.2</inf>ga<inf>o.8</inf>as | Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG | International Electron Devices Meeting | 13 | 0 | |
2008 | Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters | Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; MINGHWEI HONG ; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y. | Applied Physics Letters | 117 | 101 | |
2011 | Attainment of low interfacial trap density absent of a large midgap peak in In<inf>0.2</inf>Ga<inf>0.8</inf> As by Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) passivation | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kow, J.; MINGHWEI HONG | Applied Physics Letters | 26 | 23 | |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | 3 | |
2007 | Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering | Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG | Thin Solid Films | 9 | 9 | |
2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 11 | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2007 | Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion | Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG | Applied Physics Letters | 27 | 25 | |
2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |