公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | A 2.17 dB NF, 5 GHz band monolithic CMOS LNA with 10 mW DC power consumption | Chiu, Hung-Wei; Lu, Shey-Shi ; Lin, Yo-Sheng | IEEE Symposium on VLSI Circuits | 0 | 0 | |
2005 | A 2.17-dB NF 5-GHz-band monolithic CMOS LNA with 10-mW DC power consumption | Chiu, Hung-Wei; Lu, Shey-Shi ; Lin, Yo-Sheng | IEEE Transactions on Microwave Theory and Techniques | 143 | 121 | |
2006 | A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology | Wang, Tao ; Chen, Chun-Hao; Lin, Yo-Sheng; Lu, Shey-Shi | IEEE Electron Device Letters | 23 | 20 | |
2005 | An Analysis of Base Bias Current Effect on SiGe HBTs | Lin, Yo-Sheng; Lu, Shey-Shi | IEEE Transactions on Electron Devices | 2 | 2 | |
2002 | An Analysis of the Anomalous Dip in Scattering
Parameter of InGaP–GaAs Heterojunction
Bipolar Transistors (HBTs) | Tu, Hsing-Yuan; Lin, Yo-Sheng; Chen, Ping-Yu; Lu, Shey-Shi ; Pan, Hsuan-Yu | IEEE TRANSACTIONS ON ELECTRON DEVICES | | | |
2008 | DVD探頭之應用-自動視準儀 | 林友聖; Lin, Yo-Sheng | | | | |
1997 | Fabrication and simulation of Ga0.51In0.49P/InxGa1-xAs doped-channel FETs and MMIC amplifiers grown by GSMBE | Lu, Shey-Shi ; Lin, Yo-Sheng | Annual Device Research Conference | 0 | 0 | |
1996 | Fabrication and simulation of high-power high-speed Ga0.51In0.49P/GaAs airbridge gate MISFET's grown by GSMBE | Lin, Yo-Sheng; Wang, Yo-Jen; Lu, Shey-Shi ; Meng, Charles Chin-Chun | GaAs IC Symposium (Gallium Arsenide Integrated Circuit) | 0 | 0 | |
1999 | Ga0.51In0.49P/InxGa1-xAs/GaAs Lattice-Matched and Strained Doped-Channel Field-Effect-Transistors Grown by Gas-Source Molecular-Beam-Epitaxy | Lin, Yo-Sheng; Lu, Shey-Shi ; Chang, Pei-Zen | Journal of Applied Physics | | | |
2005 | High-performance fully integrated 4 GHz CMOS LC VCO in standard 0.18-μm CMOS technology | SHEY-SHI LU ; Lu, Shey-Shi ; Wang, Tao ; Lin, Yo-Sheng | Emerging Information Technology Conference 2005 | 1 | 0 | |
1997 | High-power high-speed Ga0.51In0.49P/InxGa1-xAs doped-channel FET's | Lin, Yo-Sheng; Lu, Shey-Shi | International Conference on Indium Phosphide and Related Materials | 0 | 0 | |
1999 | S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices | Lin, Yo-Sheng; Lu, Shey-Shi ; Lan-Hai; Chang, Pei-Zen | Microwave and Optical Technology Letters | 0 | | |
2005 | The determination of S-Parameters from the poles of voltage-gain transfer function for RF IC design | Lu, Shey-Shi ; Lin, Yo-Sheng; Chiu, Hung-Wei; Chen, Yu-Chang; Meng, Chin-Chun | IEEE Transactions on Circuits and Systems I: Regular Papers | 11 | 9 | |
1996 | The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE | Lin, Yo-Sheng; Lu, Shey-Shi | International Semiconductor Conference, 1996 | 0 | 0 | |