| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2020 | Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2 | Fan S.-T; Chen Y.-W; Chen P.-S; Liu C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | 0 | 0 | |
| 2021 | Architecture and Optimization of 2T (Footprint) SRAM | Chung C.-C; Lin H.-C; Huang B.-W; Tsen C.-J; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 2 | 1 | |
| 2017 | Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces | Lan H.-S; Liu C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 14 | 10 | |
| 2017 | Band calculation of lonsdaleite Ge | Chen P.-S; Fan S.-T; Lan H.-S; Liu C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 8 | 6 | |
| 2018 | Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well | Lin C.-Y; Ye H.-Y; Lu F.-L; Lan H.S; Liu C.W.; CHEE-WEE LIU | Optical Materials Express | 5 | 4 | |
| 2018 | Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition | Tsai C.-E; Lu F.-L; Chen P.-S; Liu C.W.; CHEE-WEE LIU | Thin Solid Films | 8 | 8 | |
| 2018 | Comprehensive thermal SPICE modeling of FinFETs and BEOL with layout flexibility considering frequency dependent thermal time constant, 3D heat flows, boundary/alloy scattering, and interfacial thermal resistance with circuit level reliability evaluation | Yan J.-Y; Chung C.-C; Jan S.-R; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 5 | 0 | |
| 2021 | Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation | Chen W.-J; Tsou Y.-J; Shih H.-C; Liu P.-C; Liu C.W.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 1 | 0 | |
| 2020 | Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors | Liu H.-H; Huang Y.-S; Lu F.-L; Ye H.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 3 | 2 | |
| 2018 | Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications | Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 3 | 3 | |
| 2021 | Double-layer amorphous InGaZnO thin film transistors with high mobility and high reliability | Li S.-L; Lee M.-X; Yen C.-C; Chen T.-L; Chou C.-H; Liu C.W.; CHEE-WEE LIU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 0 | 0 | |
| 2020 | Energy preference of uniform polarization switching for HfO2 by first-principle study | Chen Y.-W; Fan S.-T; Liu C.W.; CHEE-WEE LIU | Journal of Physics D: Applied Physics | 8 | 7 | |
| 2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
| 2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 6 | 0 | |
| 2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
| 2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; Liu C.W.; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 9 | 0 | |
| 2021 | Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 4 | |
| 2014 | Image quiz: An old woman with a fava-bean in the heart | Liu C.W.; JEN-KUANG LEE ; Huang J.H.; Lin H.H. | Hong Kong Journal of Emergency Medicine | 0 | 0 | |
| 2017 | Interface Trap Density Reduction Due to AlGeO Interfacial Layer Formation by Al Capping on Al2O3/GeOx/Ge Stack | Huang C.-H; Huang Y.-S; Chang D.-Z; Lin T.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 4 | 3 | |
| 2020 | Interpretable Neural Network to Model and to Reduce Self-Heating of FinFET Circuitry | Chung C.-C; Lin H.-C; Lin H.H; Wan W.K; Yang M.-T; Liu C.W.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | 0 | |
