公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 41 | 34 | |
2003 | Analysis on the temperature dependent characteristics of SiGe HBTs | Liang, C.-S.; Pei, Z.; Hsu, Y.-M.; Pan, T.-M.; Liu, Y.-H.; Liu, C.W.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings | 0 | 0 | |
2004 | Bandwidth Enhancement in an Integratable SiGe
Phototransistor by Removal of Excess Carriers | Pei, Z.; Shi, J.W.; Hsu, Y.M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.J.; Liu, C.W. | IEEE ELECTRON DEVICE LETTERS | | | |
2004 | Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers | Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.S.; Lu, S.C.; Hsieh, W.Y.; Tsai, M.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | 34 | 32 | |
2004 | Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation | Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | Solid-State Electronics | 6 | 8 | |
2001 | Effect of recombination lifetime and velocity saturation on Ge profile design for the base transit time of Si/SiGe HBTs | Chang, S.T.; Liu, C.W.; Lu, S.C.; CHEE-WEE LIU | 2001 International Semiconductor Device Research Symposium, ISDRS 2001 | 0 | 0 | |
2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Zingway; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W. | IEEE Electron Device Letters | | | |
2003 | Integratable SiGe phototransistor with high speed (BW = 3 GHz) and extremely-high avalanche responsivity | Pei, Z.; Shi, J.-W.; Hsu, Y.-M.; Yuan, F.; Liang, C.-S.; Liu, C.W.; Pan, T.-M.; Lu, S.C.; Hsieh, W.-Y.; Tsai, M.-J.; CHEE-WEE LIU | 2003 International Semiconductor Device Research Symposium, ISDRS 2003 | 0 | 0 | |
2003 | Optimal SiGe:C HBT module for BiCMOS applications | Lai, L.S.; Liang, C.S.; Chen, P.S.; Hsu, Y.M.; Liu, Y.H.; Tseng, Y.T.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; Rosenblad, C.; Buschbaum, T.; Buschbeck, M.; Ramm, J.; CHEE-WEE LIU | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 3 | 0 | |
2004 | Performance enhancement of high-speed SiGe-based heterojunction phototransistor with substrate terminal | Shi, J.-W.; Pel, Z.; Yuan, F.; Hsu, Y.-M.; Liu, C.-W.; Lu, S.C.; Tsai, M.-J.; CHEE-WEE LIU | Applied Physics Letters | 6 | 5 | |
2004 | Strained Si<inf>1-x</inf>C<inf>x</inf> field effect transistor on SiGe substrate | Chang, S.T.; Lee, M.-H.; Lu, S.C.; Liu, C.W.; CHEE-WEE LIU | Proceedings of Electrochemical Society | | | |
2012 | Surface passivation of Cu(In,Ga)Se <inf>2</inf> using atomic layer deposited Al <inf>2</inf>O <inf>3</inf> | Hsu, W.-W.; Chen, J.Y.; Cheng, T.-H.; Lu, S.C.; Ho, W.-S.; Chen, Y.-Y.; Chien, Y.-J.; Liu, C.W.; CHEE-WEE LIU | Applied Physics Letters | 92 | 87 | |