公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2018 | Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing with Device Applications | CHEE-WEE LIU ; Lu F.-L; Tsai C.-E; Wong I.-H; Lu C.-T; CHEE-WEE LIU | IEEE Transactions on Electron Devices | |||
2017 | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
2017 | Process simulation of pulsed laser annealing on epitaxial Ge on Si | CHEE-WEE LIU ; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; CHEE-WEE LIU | ECS Journal of Solid State Science and Technology |