公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2016 | 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits | Li C.-K; Wu C.-K; Hsu C.-C; Lu L.-S; Li H; Lu T.-C; YUH-RENN WU | AIP Advances | 38 | 40 | |
2011 | Enhanced output power of gan-based resonance cavity light-emitting diodes with optimized ITO design | Wu T.-T; CHIEN-CHUNG LIN ; Wu Y.-L; Chen C.-K; Lu T.-C; Kuo H.-C; Wang S.-C. | Journal of Lightwave Technology | 4 | 3 | |
2022 | High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes | Walde S; Huang C.-Y; Tsai C.-L; Hsieh W.-H; Fu Y.-K; Hagedorn S; Yen H.-W; Lu T.-C; Weyers M; Huang C.-Y.; HUNG-WEI YEN | Acta Materialia |