| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M. H.; Chang, S. T.; Lee, M. H.; Maikap, S.; Liu, C. W. | Journal of Applied Physics | | |  |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 19 | 20 | |
| 2007 | Band offsets and charge storage characteristics of atomic layer deposited high- k Hf O<inf>2</inf> Ti O<inf>2</inf> multilayers | Maikap, S.; Wang, T.-Y.; Tzeng, P.-J.; Lin, C.-H.; Tien, T.C.; Lee, L.S.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Applied Physics Letters | 59 | 47 | |
| 2007 | Band offsets and charge storage characteristics of atomic layer deposited high-k HfO2/TiO2 multilayers | Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Tien, T. C.; Lee, L. S.; Yang, J. R.; Tsai, M.J. | Applied Physics Letters | | | |
| 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H.; Yuan, F.; Lee, M.H.; CHEE-WEE LIU | Proceedings of the Electrochemical Society | | | |
| 2004 | BICMOS devices under mechanical strain | Liu, C.W.; Maikap, S.; Liao, M.H. ; Yuan, F.; Lee, M.H. | Electrochemical Society | 5 | | |
| 2010 | Characteristics of ALD high-�e HfAlO<inf>x</inf> nanocrystals in memory capacitors annealed at high temperatures | Li, W.C.; Banerjee, W.; Maikap, S.; Yang, J.R.; JER-REN YANG | ECS Transactions | 0 | 0 | |
| 2007 | Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate | Maikap, S.; Lee, M.H.; Chang, S.T.; Liu, C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 26 | 26 | |
| 2007 | Charge storage characteristics of atomic layer deposited RuO<inf>x</inf> nanocrystals | Maikap, S.; Wang, T.Y.; Tzeng, P.J.; Lin, C.H.; Lee, L.S.; Yang, J.R.; Tsai, M.J.; JER-REN YANG | Applied Physics Letters | 47 | 47 | |
| 2007 | Charge storage characteristics of atomic layer deposited RuOx nanocrystals | Maikap, S.; Wang, T. Y.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Yang, J. R.; Tsai, M. J. | Applied Physics Letters | | | |
| 2007 | Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. | Semiconductor Science and Technology 22: | | | |
| 2007 | Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applications | Maikap, S.; Lee, H.Y.; Wang, T.-Y.; Tzeng, P.-J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.-R.; Tsai, M.-J.; JER-REN YANG | Semiconductor Science and Technology | 118 | 121 | |
| 2017 | Cross-point resistive switching memory and urea sensing by using annealed GdO<inf>x</inf> film in IrO<inf>x</inf>/GdO<inf>x</inf>/W structure for biomedical applications | Kumar, P.; Maikap, S.; Ginnaram, S.; Qiu, J.-T.; Jana, D.; Chakrabarti, S.; Samanta, S.; Singh, K.; Roy, A.; Jana, S.; Dutta, M.; Chang, Y.-L.; Cheng, H.-M.; Mahapatra, R.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Journal of the Electrochemical Society | 17 | 18 | |
| 2010 | Density and grain size of the IrO<inf>x</inf> metal nanocrystals in n-Si/SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>/IrO<inf>x</inf>/Al <inf>2</inf>O<inf>3</inf> memory capacitors | Li, W.C.; Banerjee, W.; Maikap, S.; Yang, J.R.; JER-REN YANG | ECS Transactions | 1 | 0 | |
| 2016 | Detection of pH and Enzyme-Free H<inf>2</inf>O<inf>2</inf> Sensing Mechanism by Using GdO<inf>x</inf> Membrane in Electrolyte-Insulator-Semiconductor Structure | Kumar, P.; Maikap, S.; Qiu, J.-T.; Jana, S.; Roy, A.; Singh, K.; Cheng, H.-M.; Chang, M.-T.; Mahapatra, R.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Nanoscale Research Letters | 6 | 6 | |
| 2014 | Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrO<inf>x</inf>/GdO<inf>x</inf>/W cross-point memories | Jana, D.; Maikap, S.; Prakash, A.; Chen, Y.-Y.; Chiu, H.-C.; Yang, J.-R.; JER-REN YANG | Nanoscale Research Letters | 23 | 33 | |
| 2004 | Evidence of Si/SiGe heterojunction roughness scattering | Liu, C. W.; Lee, M. H.; Lee, Y. C.; Chen, P. S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; LiuCW | Applied Physics Letters | | | |
| 2004 | Evidence of SiSiGe heterojunction roughness scattering | Liu, C.W.; Lee, M.H.; Lee, Y.C.; Chen, P.S.; Yu, C.-Y.; Wei, J.-Y.; Maikap, S.; CHEE-WEE LIU | Applied Physics Letters | 4 | 3 | |
| 2018 | Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structure | Chakrabarti, S.; Panja, R.; Roy, S.; Roy, A.; Samanta, S.; Dutta, M.; Ginnaram, S.; Maikap, S.; Cheng, H.-M.; Tsai, L.-N.; Chang, Y.-L.; Mahapatra, R.; Jana, D.; Qiu, J.-T.; Yang, J.-R.; JER-REN YANG | Applied Surface Science | 24 | 23 | |
| 2004 | Ge Outdiffusion Effect on Flicker Noise
in Strained-Si nMOSFETs | Hua, W.C.; Lee, M.H.; Chen, P.S.; Maikap, S.; Liu, C.W.; Chen, K.M. | IEEE ELECTRON DEVICE LETTERS | | | |
