公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics | Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG | Solid-State Electronics | | | |
1998 | Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors | Ren, F; Hong, M; Chu, SNG; Marcus, MA; Schurman, MJ; Baca, A; Pearton, SJ; Abernathy, CR; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors | Abernathy, CR; Baca, A; Chu, SNG; Hong, M; Lothian, JR; Marcus, MA; Pearton, SJ; Ren, F; Schurman, MJ; MINGHWEI HONG | | | | |
1998 | Ga2O3 (Gd2O3) as a dielectric insulator for GaAs device applications | Lay, Tsong S; Hong, Minghwei; Mannaerts, JP; Liu, CT; Kwo, Jueinai R; Ren, Fan; Marcus, MA; Ng, KK; Chen, Young-Kai; Chou, Li-Jen; others; MINGHWEI HONG | Asia Pacific Symposium on Optoelectronics' 98 | | | |
1998 | Ga2O3 (Gd2O3) as a gate dielectric for GaAs MOSFETs | Hong, M; Kwo, J; Liu, CT; Marcus, MA; Lay, TS; Ren, F; Mannaerts, JP; Ng, KK; Chen, YK; Chou, LJ; others; MINGHWEI HONG | 28th State-of-the-Art Program on Compound Semiconductors | | | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |