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  1. NTU Scholars
  2. Research Outputs

Browsing by Author P. Su


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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
2015Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-AssistV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices6
2013Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FETM.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices34
2012Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic CircuitsM.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices30
2011Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature SensitivityV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Journal on Emerging and Selected Topics in Circuits and Systems3
2012Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor StackingV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Electron Device Letters10
2013Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFETV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices14
2013Design and Analysis of Robust Tunneling FET SRAMY.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices24
2011FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate DielectricsV. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices20
2012Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETsC.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU ; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices5
2012Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETsC.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU ; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Nanotechnology8
2011Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFETV. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU ; V. P.-H. Hu; Y.-S. Wu; P. Su; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Nanotechnology8
2014Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuitsM.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU Microelectronics Reliability13
2014Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer CouplingM.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices6
2009Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's EquationV. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices5
2013Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM CellsV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices6
2013Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold OperationV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Nanotechnology3
2012Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM ApplicationsM.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Circuits and Systems II: Express Briefs9
Showing results 1 to 17 of 17

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
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開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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