| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
|---|---|---|---|---|---|---|
| 2015 | Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 6 | ||
| 2013 | Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FET | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 34 | ||
| 2012 | Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 30 | ||
| 2011 | Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 3 | ||
| 2012 | Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor Stacking | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Electron Device Letters | 10 | ||
| 2013 | Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFET | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 14 | ||
| 2013 | Design and Analysis of Robust Tunneling FET SRAM | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 24 | ||
| 2011 | FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics | V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 20 | ||
| 2012 | Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs | C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU ; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 5 | ||
| 2012 | Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs | C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; VITA PI-HO HU ; C.-H. Yu; Y.-S. Wu; V. P.-H. Hu; P. Su; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 8 | ||
| 2011 | Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET | V. P.-H. Hu; Y.-S. Wu; P. Su; VITA PI-HO HU ; V. P.-H. Hu; Y.-S. Wu; P. Su; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 8 | ||
| 2014 | Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits | M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; S.-Y. Yang; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | Microelectronics Reliability | 13 | ||
| 2014 | Stability and Performance Optimization of Heterochannel Monolithic 3-D SRAM Cells Considering Interlayer Coupling | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 6 | ||
| 2009 | Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells—An Assessment Based on Analytical Solutions of Poisson's Equation | V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; Y.-S. Wu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 5 | ||
| 2013 | Threshold Voltage Design and Performance Assessment of Hetero-Channel SRAM Cells | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 6 | ||
| 2013 | Threshold Voltage Design of UTB SOI SRAM With Improved Stability/Variability for Ultralow Voltage Near Subthreshold Operation | V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 3 | ||
| 2012 | Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Circuits and Systems II: Express Briefs | 9 |
