公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2004 | 1.3m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | P. W. Liu; G. H. Liao; HAO-HSIUNG LIN | Electronics Letters. | 4 | ||
2003 | 1.3m GaAsSb/GaAs single quantum well laser diode | G. H. Liao; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | |||
2003 | Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells | H. P. Hsu; Y. S. Huang; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | |||
2008 | Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Thin Solid Films | 11 | 11 | |
2001 | Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well | P. W. Liu; HAO-HSIUNG LIN | Optics and Photonics Taiwan '01 | |||
2005 | GaAsSb/GaAs quantum wells grown by MBE | H. H. Lin; P. W. Liu; C. L. Tsai; G. H. Liao; J. Lin; HAO-HSIUNG LIN | MBE Taiwan 2005 | |||
2003 | GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser | H. H. Lin; P. W. Liu; J. R. Chen; HAO-HSIUNG LIN | Sixth Chinese Optoelectronics Symposium | |||
2003 | GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers | H. H. Lin; P. W. Liu; G. H. Liao; HAO-HSIUNG LIN | electron devices and materials symposium | |||
2004 | GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes | H. H. Lin; P. W. Liu; G. H. Liao; C. L. Tsai; HAO-HSIUNG LIN | MBE Taiwan | |||
2001 | Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well | M. H. Lee; P. W. Liu; HAO-HSIUNG LIN | 2001 Electron Devices and Materials Symposia | |||
2003 | Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy | G. Tsai; P. W. Liu; HAO-HSIUNG LIN | OPT’03 | |||
2002 | Low-threshold ~1.3m GaAsSb quantum well laser | P. W. Liu; M. H. Lee; J. R. Chen; HAO-HSIUNG LIN | 2002 IEDMS | |||
2006 | Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes | A. Krier; M. Stone; Q. D. Zhuang; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | 22 | 19 | |
2007 | Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy | S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN | Applied Physics Letters | |||
2004 | Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells | T. T. Chen; W. S. Su; P. W. Liu; HAO-HSIUNG LIN ; YANG-FANG CHEN | Applied Physics Letters | 10 | 7 | |
2003 | Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells | T. T. Chen; C. H. Chen; W. Z. Cheng; W. S. Su; M. H. Ya; Y. F. Chen; P. W. Liu; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | 15 | ||
2006 | Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy | P. W. Liu; G. Tsai; A. Krier; Q. D. Zhuang; M. Stone; HAO-HSIUNG LIN | Applied Physics Letters | 13 | 16 | |
2007 | Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells | H. P. Hsu; P. Sitarek; Y. S. Huang; P. W. Liu; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | physica status solidi (a) | 2 | ||
2005 | Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy | P. W. Liu; G. Tsai; H. H. Lin; T. Krier; HAO-HSIUNG LIN | OPT2005 | |||
2005 | Study on the band line-up of GaAsSb/GaAs quantum wells | C. L. Tsai; P. W. Liu; G. H. Liao; M. H. Lee; HAO-HSIUNG LIN | MBE Taiwan 2005 |