公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2015 | ~20% Idsat improvement in the Si 3D FinFET with the implement of D-SMT process | M. H.Liao ; P.-G. Chen; C. P. Hsieh | 9th International Conference on Silicon Epitaxy and Heterostructures | |||
2015 | The demonstration of a D-SMT stressor on Ge planer n-MOSFETs | M. H.Liao ; P.-G. Chen | AIP Advances | |||
2015 | The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs | M. H.Liao ; P.-G. Chen | IEEE Transactions on Nanotechnology | 2 | 1 | |
2015 | The demonstration of promising Ge ntype multi-gate-FETs with the magnetic FePt metal gate scheme | M. H.Liao ; P.-G. Chen | Applied Physics Letters | |||
2015 | The demonstration of the Si nano-tube device with the promising short channel control | M. H.Liao ; P.-G. Chen | Journal of Applied Physics | |||
2015 | The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs | M. H.Liao ; P.-G. Chen | Applied Physics Letters | |||
2016 | Enhancement of gate-bias and current stress stability of p-type SnO thin-film transistors with SiNx/HfO2 passivation layers | S.-M. Hsu; Y.-S. Li; M.-S. Tu; J.-C. He; I-C. Chiu; P.-G. Chen; M.-H. Lee; J.-Z. Chen; I-C. Cheng; I-CHUN CHENG | The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices | |||
2013 | Experimental demonstration for ultralow on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs withimplant-free process | M. H.Liao ; P.-G. Chen | Journal of Physics D: Applied Physics | |||
2017 | Ferroelectric Al:HfO2 Negative Capacitance FETs | M. H.Liao ; M. H. Lee; P.-G. Chen; S.-T. Fan; Y.-C. Chou; C.-Y. Kuo; C.-H. Tang; H.-H.Chen; S.-S. Gu; R.-C. Hong; Z.-Y. Wang; S.-Y. Chen; C.-Y. Liao; K.-T. Chen; S.T. Chang; K.-S. Li; C. W. Liu | International Electron Devices Meeting | |||
2017 | In0.18Al0.82N/AlN/GaN HEMT on Si with Hybrid Ohmic and Schottky Source/Drain Solid State Electronics | M. H.Liao ; P.-G. Chen; M. Tang; M. H. Lee | Solid State Electronics | |||
2014 | Monolithic integration of GaN-based light- emitting diodes and metal-oxide-semiconductor field-effect transistors | M. H.Liao ; Y.-J. Lee; Z.-P. Yang; P.-G. Chen; Y.-A. Hsieh; Y.-C. Yao; M.-H. Lee; M.-T. Wang; J.-M. Hwang | Optics Express | |||
2016 | Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs | M. H. Lee; S.-T. Fan; C.-H. Tang; P.-G. Chen; Y.-C. Chou; H.-H. Chen; J.-Y. Kuo; M.-J. Xie; S.-N. Liu; M.-H. Liao; C.-A. Jong; K.-S. Li; M.-C. Chen; C. W. Liu; LIN-SHAN LEE | International Electron Devices Meeting (IEDM) | |||
2015 | Prospects for Ferroelectric HfZrOx FETs with Experimentally CET=0.98nm,SSfor=42mV/dec, SSrev=28mV/dec, Switch-OFF | M. H.Liao ; M. H. Lee; P.-G. Chen; C. Liu; K-Y. Chu; C.-C. Cheng; M.-J. Xie; S.-N. Liu; J.-W. Lee; S.-J. Huang; M. Tang; K.-S. Li; M.-C. Chen | IEEE Electron Device Meeting | |||
2015 | Sub-60mV-Swing Negative-Capacitance FinFET without Hysteresis | M. H.Liao ; K. S. Li; P.-G. Chen; T. Y. Lai; C. H. Lin; C.-C. Cheng; C. C. Chen; M. H. Lee; M. C. Chen; J. M. Sheih; W. K. Yeh; F. L. Yang; Sayeef Salahuddin; Chenming Hu | IEEE Electron Device Meeting | 233 | 0 | |
2018 | Sub-60mV/dec Subthreshold Swing on Reliability of Ferroelectric HfZrOx Negative-Capacitacne FETs with DC Sweep and AC Stress Cycles | M. H.Liao ; K.-T. Chen; C.-Y. Liao; R.-C. Hong; S.-S. Gu; Y.-C. Chou; Z.-Y. Wang; S.-Y.Chen; G.-Y. Siang; H.-Y. Chen; C. Lo; P.-G. Chen; Y.-J. Lee; K.-S.Li; S. T. Chang; M. H. Lee | 2018 International Conference on Solid State Devices and Materials |