Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
1996 | C-V and G-V characterization of in-situ fabricated Ga<inf>2</inf>O<inf>3</inf>-GaAs interfaces for inversion/accumulation device and surface passivation applications | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Solid-State Electronics | 35 | 36 | |
1998 | Insulator passivation of Ino <inf>0.2</inf>Ga <inf>0.8</inf>As-GaAs surface quantum wells | Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG | IEEE Journal of Quantum Electronics | 2 | 2 | |
1997 | Novel Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) passivation techniques to produce low D <inf>it</inf> oxide-GaAs interfaces | Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG | Journal of Crystal Growth | 73 | 68 | |
1996 | Observation of inversion layers at GA<inf>2</inf>O<inf>3</inf>-GaAs interfaces fabricated by in-situ molecular-beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Electronics Letters | 2 | 2 | |
1996 | Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG | Applied Physics Letters | 188 | 212 | |
1996 | Thermodynamic and photochemical stability of low interface state density Ga<inf>2</inf>O<inf>3</inf>-GaAs structures fabricated by in situ molecular beam epitaxy | Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG | Applied Physics Letters | 26 | 29 | |