Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2018 | Atom-to-atom interaction of O <inf>2</inf> with epi Ge(001)-2 ? 1 in elucidating GeO <inf>x</inf> formation | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 5 | 6 | |
2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 ? 6 and As-rich GaAs(001)-2 ? 4 surfaces: A synchrotron radiation photoemission study | Pi, T.-W.; Lin, H.-Y.; Liu, Y.-T.; Lin, T.-D.; Wertheim, G.K.; Kwo, J.; Hong, M.; MINGHWEI HONG | Nanoscale Research Letters | | 0 | |
2018 | Atomic Nature of the Growth Mechanism of Atomic Layer Deposited High-庥 Y <inf>2</inf> O <inf>3</inf> on GaAs(001)-4 ? 6 Based on in Situ Synchrotron Radiation Photoelectron Spectroscopy | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | ACS Omega | 7 | 8 | |
2017 | Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2???4 interface: An in-situ synchrotron radiation photoemission study | Cheng, C.-P.; Chen, W.-S.; Lin, K.-Y.; Wei, G.-J.; Cheng, Y.-T.; Lin, Y.-H.; Wan, H.-W.; Pi, T.-W.; Tung, R.T.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Surface Science | 7 | 7 | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2005 | Energy structures and chemical reactions at the Al/LiF/Al q3 interfaces studied by synchrotron-radiation photoemission spectroscopy | CHIH-I WU ; Wu, C.-I.; Lee, G.-R.; Pi, T.-W.; CHIH-I WU | Applied Physics Letters | | | |
2010 | Formation of gap states and enhanced current injection efficiency in organic light emitting diodes incorporated with subphthalocyanine | CHIH-I WU ; Chen, Y.-H.; Chang, Y.-J.; Lee, G.-R.; Chang, J.-H.; Wu, I.-W.; Fang, J.-H.; Hsu, S.-H.; Liu, S.-W.; Wu, C.-I.; Pi, T.-W.; CHIH-I WU | Organic Electronics: physics, materials, applications | | | |
2015 | Graphene Anodes and Cathodes: Tuning the Work Function of Graphene by Nearly 2 eV with an Aqueous Intercalation Process | CHIH-I WU ; Chang, J.-K.; Lin, W.-H.; Taur, J.-I.; Chen, T.-H.; Liao, G.-K.; Pi, T.-W.; Chen, M.-H.; CHIH-I WU | ACS Applied Materials and Interfaces | | | |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
2011 | Improvements of electron injection efficiency using subphthalocyanine mixed with lithium fluoride in cathode structures of organic light emitting diodes | CHIH-I WU ; Chen, Y.-H.; Cheng, Y.-J.; Lee, G.-R.; Wu, C.-I.; Pi, T.-W.; CHIH-I WU | Organic Electronics: physics, materials, applications | | | |
2018 | In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y <inf>2</inf> O <inf>3</inf> on a p-type GaAs(0 0 1)-4 ? 6 surface | Cheng, C.-P.; Chen, W.-S.; Cheng, Y.-T.; Wan, H.-W.; Lin, K.-Y.; Young, L.B.; Yang, C.-Y.; Pi, T.-W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Physics D: Applied Physics | 3 | 3 | |
2010 | Influences of evaporation temperature on electronic structures and electrical properties of molybdenum oxide in organic light emitting devices | CHIH-I WU ; Lin, C.-T.; Yeh, C.-H.; Chen, M.-H.; Hsu, S.-H.; Wu, C.-I.; Pi, T.-W.; CHIH-I WU | Journal of Applied Physics | | | |
2008 | Investigations of electron-injection mechanisms and interfacial chemical reactions of Bphen doped with rubidium carbonate in OLEDs | CHIH-I WU ; Chen, M.-H.; Leem, D.-S.; Lin, C.T.; Lee, G.R.; Pi, T.-W.; Kim, J.-J.; CHIH-I WU | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2009 | Low-temperature electronic structures and intramolecular interaction of oligofluorenes studied by synchrotron photoemission spectroscopy | Lee, G.-R.; Chen, Y.-H.; Lin, C.-T.; Wu, C.-I.; Pi, T.-W.; Wu, C.-C.; Wong, K.-T.Lee, Guan-Ru; Chen, Yu-Hung; Lin, Chang-Ting; Wu, Chih-I ; Pi, Tun-Wen; Wu, Chung-Chih ; Wong, Ken-Tsung | Applied Physics Letters | 1 | 1 | |
2007 | Mechanisms of enhanced hole-injection in organic light-emitting devices with MoO3 layers | Lin, C.-T.; Lee, G.-R.; CHIH-I WU ; Cho, T.-Y.; CHUNG-CHIH WU ; Pi, T.-W. | IDMC 2007 - International Display Manufacturing Conference and FPD Expo | 0 | | |
2019 | Microscopic views of atomic and molecular oxygen bonding with epi ge(001)-2 × 1 studied by high-resolution synchrotron radiation photoemission | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Nanomaterials | 5 | 5 | |
2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs(111)A-2?2 from atomic layer deposition | Fanchiang, Y.-T.; Chiang, T.-H.; Pi, T.-W.; Wertheim, G.K.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 0 | 0 | |
2017 | Surface electronic structure of epi germanium (001)-2 ? 1 | Cheng, Y.-T.; Lin, Y.-H.; Chen, W.-S.; Lin, K.-Y.; Wan, H.-W.; Cheng, C.-P.; Cheng, H.-H.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 17 | 14 | |
2020 | Surface electronic structure of Si<inf>1-x</inf>Ge <inf>x</inf>(001)-2 × 1: A synchrotron radiation photoemission study | Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; MINGHWEI HONG | Applied Physics Express | 6 | 6 | |
2013 | Surface passivation of GaSb(100) using molecular beam epitaxy of Y2O3 and atomic layer deposition of Al2O3: A comparative study | Chu, R.-L.; Hsueh, W.-J.; Chiang, T.-H.; Lee, W.-C.; Lin, H.-Y.; Lin, T.-D.; Brown, G.J.; Chyi, J.-I.; Huang, T.S.; Pi, T.-W.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Applied Physics Express | 18 | 17 | |