公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2012 | 064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | | | |
2013 | Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4$\\times$ 6 and As-rich GaAs (001)-2$\\times$ 4 surfaces: a synchrotron radiation photoemission study | Pi, Tun-Wen; Lin, Hsiao-Yu; Liu, Ya-Ting; Lin, Tsung-Da; Wertheim, Gunther K; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG | Nanoscale research letters | | | |
2010 | $\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2009 | Electronic and chemical properties of cathode structures using4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers | Chen, Mei-Hsin; Chen, Yu-Hung; Lin, Chang-Tin; Lee, Guan-Ru; Wu, Chih-I; Leem, Dong-Seok; Kim, Jang-Joo; Pi, Tun-Wen; CHIH-I WU | Journal of Applied Physics | 34 | 31 | |
2009 | Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes | Wu, Chih-I ; Lin, Chang-Ting; Lee, Guan-Ru; Cho, Ting-Yi; Wu, Chung-Chih ; Pi, Tun-Wen | Journal of Applied Physics | 47 | 46 | |
2005 | Energy structures and chemical reactions at the Al/LiF/Alq3 interfaces studied by synchrotron-radiation photoemission spectroscopy | Wu, Chih-I. ; Lee, Guan-Ru; Pi, Tun-Wen | Applied Physics Letters | | | |
2009 | Enhancement in current efficiency in organic light-emitting diodes with incorporation of subphthalocyanine | Chen, Yu-Hung; Chang, Jung-Hung; Lee, Guan-Ru; Wu, I-Wen; Fang, Jheng-Hao; Wu, Chih-I; Pi, Tun-Wen; CHIH-I WU | Applied Physics Letters | 20 | 18 | |
2010 | In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces | Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Raynien Kwo, J; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG | APS Meeting Abstracts | | | |
2009 | Low-temperature electronic structures and intramolecular interaction of oligofluorenes studied by synchrotron photoemission spectroscopy | Lee, G.-R.; Chen, Y.-H.; Lin, C.-T.; Wu, C.-I.; Pi, T.-W.; Wu, C.-C.; Wong, K.-T.Lee, Guan-Ru; Chen, Yu-Hung; Lin, Chang-Ting; Wu, Chih-I ; Pi, Tun-Wen; Wu, Chung-Chih ; Wong, Ken-Tsung | Applied Physics Letters | 1 | 1 | |
2014 | Method and system for manufacturing semiconductor device | Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG | | | | |
2015 | Reconstruction at the interface of one cycle of trimethylaluminum and water on GaAs (111) A-2$\\times$ 2 from atomic layer deposition | Fanchiang, Yu-Ting; Chiang, Tsung-Hung; Pi, Tun-Wen; Wertheim, Gunther K; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Applied Physics Express | | | |
2013 | Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study | Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen; others; MINGHWEI HONG | Applied Physics Express | | | |
2012 | Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | | | |
2015 | Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interface | Chu, Jui-Lin; Hong, Ming-Hwei; Kwo, Juei-Nai; Pi, Tun-Wen; Chyi, Jen-Inn; MINGHWEI HONG | | | | |