公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2002 | Direct atomic structure determination of epitaxially grown films: Gd 2 O 3 on GaAs (100) | Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG | Physical Review B | | | |
2003 | Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs. | Yacoby, Y; Sowwan, M; Pindak, R; Cross, J; Walko, D; Stern, E; Pitney, J; MacHarrie, R; Hong, M; Clarke, R; others; MINGHWEI HONG | | | | |
2001 | Interfacial structure of epitaxial Gd_2O3 on GaAs (100) determined by novel analysis of Bragg rod measurements | Pitney, JA; Pindak, R; Macharrie, RA; Hong, M; Yacoby, Y; Dufresne, E; Clarke, R; Cross, JO; Stern, EA; MINGHWEI HONG | APS Meeting Abstracts | | | |
2002 | Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100) | Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG | Physical Review-Section B-Condensed Matter | | | |