公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | Interface reactions of high-k Y2O3 gate oxides with Si | Busch, BW; Kwo, J; Hong, M; Mannaerts, JP; Sapjeta, BJ; Schulte, WH; Garfunkel, E; Gustafsson, T; MINGHWEI HONG | Applied Physics Letters | | | |
2001 | Properties of high k gate dielectrics Gd2O3 and Y2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Opila, RL; Muller, DA; Chu, SNG; Sapjeta, BJ; Lay, TS; others; MINGHWEI HONG | Journal of Applied Physics | | | |
2001 | Properties of High kappa Gate Dielectrics Gd_2O_3, Y_2O_3, and yttria stabilized ZrO2 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal Opila Jr, YJ; Muller, DA; Chu, SNG; Sapjeta, BJ; Mannaerts, JP; Boone, T; others; MINGHWEI HONG | APS Meeting Abstracts | | | |