公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1991 | A periodic index separate confinement heterostructure quantum well laser | Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG | Applied Physics Letters | | | |
1999 | Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Sergent, AM; MINGHWEI HONG | Science | 404 | 390 | |
1997 | Growth of Ga 2 O 3 (Gd 2 O 3) using molecular beam epitaxy technique-key to first demonstration of GaAs MOSFETs | Hong, M; Ren, F; Hobson, WS; Kuo, JM; Kwo, J; Mannaerts, JP; Lothian, JR; Marcus, MA; Liu, CT; Sergent, AM; others; MINGHWEI HONG | IEEE International Symposium on Compound Semiconductors, 1997 | | | |
2000 | High E gate dielectrics Gd2O3 and Y2O3 for silicon | Kwo, J; Hong, M; Kortan, AR; Queeney, KT; Chabal, YJ; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; Rosamilia, JM; MINGHWEI HONG | Applied Physics Letters | | | |
2000 | New High $ɛ$ Gate Dielectrics Gd_2O3 and Y_2O3 for Si | Kwo, J; Hong, M; Kortan, AR; Queeney, KL; Chabal, YJ; Lay, TS; Mannaerts, JP; Boone, T; Krajewski, JJ; Sergent, AM; others; MINGHWEI HONG | APS Meeting Abstracts | | | |
1999 | Papers from the 17th North American Conference on Molecular Beam Epitaxy-Growth of Novel Materials and Structures-Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur | | | |
1999 | Passivation of GaAs using gallium-gadolinium oxides | Kwo, J; Murphy, DW; Hong, M; Mannaerts, JP; Opila, RL; Masaitis, RL; Sergent, AM; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | Passivation of GaAs using „Ga2O3…„Gd2O3… x, 0 x 1.0 films | Kwo, J; Murphy, DW; Hong, M; Opila, RL; Mannaerts, JP; Sergent, AM; Masaitis, RL; MINGHWEI HONG | Applied Physics Letters | | | |
1998 | Single Crystal Gd 2 0 3 Films Epitaxially Grown on GaAs-A New Dielectric for GaAs Passivation | Hong, M; Kwo, J; Kortan, AR; Mannaerts, JP; Wu, MC; Lay, TS; Sergent, AM; MINGHWEI HONG | MRS Proceedings | | | |
1998 | Structural properties of Ga2O3 (Gd2O3)-GaAs interfaces | Hong, M; Marcus, MA; Kwo, J; Mannaerts, JP; Sergent, AM; Chou, LJ; Hsieh, KC; Cheng, KY; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
1999 | The (Ga 2 O 3) 1- x (Gd 2 O 3) x, Oxides with x= 0-1.0 for GaAs Passivation | Kwo, J; Hong, M; Kortan, AR; Murphy, DW; Mannaerts, JP; Sergent, AM; Wang, YC; Hsieh, KC; MINGHWEI HONG | MRS Proceedings | | | |